BAV20W [UTC]
SILICON EPITAXIAL PLANAR DIODE;
| 型号： | BAV20W |
| 厂家： | 
Unisonic Technologies |
| 描述： | SILICON EPITAXIAL PLANAR DIODE 局域网 光电二极管 |
| 文件： | 总3页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
BAV20W
Preliminary
DIODE
SILICON EPITAXIAL PLANAR
DIODE
+
DESCRIPTION
-
The UTC BAV20W is a silicon epitaxial planar diode. The UTC
BAV20W is suitable for general purpose application.
SOD-123
FEATURES
* Planar diode
* For general purpose application
* Low leakage current
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOD-123
Packing
Lead Free
Halogen Free
BAV20WG-CA2-R
1
2
BAV20WL-CA2-R
K
A
Tape Reel
Note: Pin Assignment: A: Anode, K: Cathode
BAV20WL-CA2-R
(1)Packing Type
(1) R: Tape Reel
(2) CA2: SOD-123
(2)Package Type
(3)Lead Free
(3) L: Lead Free, G: Halogen Free
MARKING INFORMATION
PACKAGE
MARKING
V20
SOD-123
Lead Free
www.unisonic.com.tw
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Copyright © 2014 Unisonic Technologies Co., Ltd
QW-R601-205.a
BAV20W
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
200
UNIT
V
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
VRRM
VR
150
V
Forward DC Current at TA=25°C (Note 1)
Rectified Current (Average) Half Wave Rectification with
Resist. Load at TA=25°C (Note 1)
Repetitive Peak Forward Current at f>50Hz, TA=25°C
(Note 1)
IF
250
mA
IO
200
625
mA
mA
IFRM
Surge Forward Current at t<1s, TJ=25°C
Power Dissipation at TA=25°C (Note 1)
Junction Temperature
IFSM
PD
1.0
A
mW
°C
410
TJ
-55~+150
-55~+150
Storage Temperature
TSTG
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Valid provided that leads are kept at ambient temperature
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
200
UNIT
°C/W
Junction to Ambient
θJA
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VF
TEST CONDITIONS
IF=100mA
MIN TYP MAX UNIT
1.00
1.25
V
V
Forward Voltage
IF=200mA
VR=150V
100 nA
Leakage Current
IR
RF
trr
VR=150V, TJ=100°C
IF=10mA
15
μA
Dynamic Forward Resistance
Reverse Recovery Time
Capacitance Between Terminals
5.0
1.5
Ω
IF=30mA, IR=30mA, Irr=3.0mA,
RL=100Ω
50
ns
CT
VR=0 , f=1.0MHz
pF
UNISONIC TECHNOLOGIES CO., LTD
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QW-R601-205.a
www.unisonic.com.tw
BAV20W
Preliminary
DIODE
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R601-205.a
www.unisonic.com.tw
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