BC337G-16-T92-R [UTC]
Transistor;型号: | BC337G-16-T92-R |
厂家: | Unisonic Technologies |
描述: | Transistor |
文件: | 总3页 (文件大小:142K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
BC337/BC338
NPN SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
* Suitable for AF-Driver stages and low power output stages
* Complement to UTC BC327/328
1
TO-92
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
1
2
B
B
B
B
B
B
3
E
E
E
E
E
E
BC337L-x-T92-B
BC337L-x-T92-K
BC337L-x-T92-R
BC338L-x-T92-B
BC338L-x-T92-K
BC338L-x-T92-R
BC337G-x-T92-B
BC337G-x-T92-K
BC337G-x-T92-R
BC338G-x-T92-B
BC338G-x-T92-K
BC338G-x-T92-R
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
C
C
C
C
C
C
Tape Box
Bulk
Tape Reel
Tape Box
Bulk
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., LTD
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BC337/BC338
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCES
RATINGS
UNIT
BC337
BC338
BC337
BC338
50
30
45
25
V
V
V
V
Collector-Emitter Voltage
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Derate Above 25°C
VEBO
IC
5
800
V
mA
625
mW
mW/°C
°C
PC
5
Junction Temperature
Operating Temperature
Storage Temperature
TJ
125
TOPR
TSTG
-20 ~ +85
-40 ~ +150
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
200
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJc
83.3
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
BC337
BC338
BC337
BC338
45
25
50
30
5
V
V
Collector-Emitter Breakdown Voltage
BVCEO IC=10mA, IB=0
V
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BVCES IC=0.1mA, VBE=0
BVEBO IE=0.1mA, IC=0
V
V
BC337
BC338
VCE=45V, IB=0
ICES
2
2
100
100
630
nA
nA
VCE=25V, IB=0
hFE1
hFE2
VCE=1V, IC=100mA
VCE=1V, IC=300mA
100
60
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter on Voltage
VCE(SAT) IC=500mA, IB=50mA
VBE(ON) VCE=1V, IC=300mA
0.7
1.2
V
V
Output Capacitance
Cob
fT
VCB=10V, IE=0, f=1MHz
12
pF
Current Gain Bandwidth Product
VCE=5V, IC=10mA, f=50MHz
100
MHz
CLASSIFICATION OF hFE1
RANK
hFE1
16
25
40
250-630
100-250
160-400
UNISONIC TECHNOLOGIES CO., LTD
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QW-R201-039.D
www.unisonic.com.tw
BC337/BC338
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Current vs.
Base-Emitter Voltage
Collector Power Dissipation vs.
Ambient Temperature
5K
700
600
Common Emitter
VCE=1V
1K
500
400
300
100
300
30
10
200
100
0
3
1
0.2
175
0.6
0.8
0
25 50
75 100
125 150
Ambient Temperature, TA (℃)
0.4
1.0
Base-Emitter Voltage, VBE (V)
Collector Current vs.
Collector-Emitter Voltage
0.7
0.6
IB=10mA
IB=9mA
IB=7mA
IB=8mA
IB=6mA
0.5
0.4
0.3
IB=5mA
IB=4mA
IB=3mA
IB=2mA
0.2
0.1
0
IB=1mA
0
1
2
3
4
5
6
7
8
9 10
Collector-Emitter Voltage, VCE (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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