BC808L-40-AE3-R [UTC]
Transistor;型号: | BC808L-40-AE3-R |
厂家: | Unisonic Technologies |
描述: | Transistor |
文件: | 总4页 (文件大小:195K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
BC807/BC808
PNP SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
* Suitable for AF-Driver stages and low power output stages
* Complement to BC817 / BC818
Lead-free:
BC807L/BC808L
Halogen-free: BC807G/BC808G
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free
Halogen Free
1
E
E
E
E
2
B
B
B
B
3
C
C
C
C
BC807-x-AE3-R
BC808-x-AE3-R
BC807-x-AL3-R
BC808-x-AL3-R
BC807L-x-AE3-R
BC808L-x-AE3-R
BC807L-x-AL3-R
BC808L-x-AL3-R
BC807G-x-AE3-R
BC808G-x-AE3-R
BC807G-x-AL3-R
BC808G-x-AL3-R
SOT-23
SOT-23
SOT-323
SOT-323
Tape Reel
Tape Reel
Tape Reel
Tape Reel
MARKING
807-16
807-25
807-40
9FC
9GC
L: Lead Free
G: Halogen Free
808-16
808-25
808-40
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 4
QW-R206-026,D
BC807/BC808
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCES
RATINGS
-50
UNIT
V
Collector-Emitter Voltage
BC807
BC808
BC807
BC808
-30
V
Collector-Emitter Voltage
-45
V
VCEO
-25
V
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
VEBO
IC
-5
V
-800
mA
mW
°C
°C
PC
310
TJ
+150
-65 ~ +150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
BC807
BC808
BC807
BC808
-45
-25
-50
-30
-5
V
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
BVCEO IC=-10mA, IB=0
V
V
BVCES IC=-0.1mA, VBE=0
BVEBO IE=-0.1mA, IC=0
V
V
Emitter-Base Breakdown Voltage
Collector Cut-OFF Current
Emitter Cut-OFF Current
ICES
IEBO
hFE1
hFE2
VCE=-25V, VBE=0
VEB=-4V, IC=0
-100 nA
-100 nA
630
IC=-100mA, VCE=-1V
IC=-300mA, VCE=-1V
100
60
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
VCE(SAT) IC=-500mA, IB=-50mA
VBE(ON) IC=-300mA, VCE=-1V
-0.7
-1.2
V
V
Current Gain Bandwidth Product
Output Capacitance
fT
VCE=-5V, IC=-10mA, f=50MHz
VCB=-10V, f=1MHz
100
MHz
pF
Cob
12
CLASSIFICATION OF hFE
RANK
hFE1
16
25
40
100-250
60-
160-400
100-
250-630
170-
hFE2
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R206-026,D
www.unisonic.com.tw
BC807/BC808
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Base-Emitter Saturation Voltage
DC Current Gain
1000
Collector-Emitter Saturation Voltage
-10
PULSE
IC=10IB
PULSE
VCE=-2.0V
VCE(SAT)
VCE=-1.0V
100
-1
10
1
-0.1
VBE(SAT)
-0.01
-0.1
-1
-10
-100
-1000
-0.1
-1
-10
-100
-1000
Collector Current, IC(mA)
Collector Current, IC(mA)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R206-026,D
www.unisonic.com.tw
BC807/BC808
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Current Gain Bandwidth Product
1000
VCE=-5.0V
100
10
-1
-10
-100
Collector Current, IC (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R206-026,D
www.unisonic.com.tw
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