BC817-40 [UTC]

NPN GENERAL PURPOSE TRANSISTORS; NPN通用晶体管
BC817-40
型号: BC817-40
厂家: Unisonic Technologies    Unisonic Technologies
描述:

NPN GENERAL PURPOSE TRANSISTORS
NPN通用晶体管

晶体 晶体管
文件: 总3页 (文件大小:462K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
BC817 SERIES  
NPN GENERAL PURPOSE TRANSISTORS  
Unit: inch (mm)  
SOT- 23  
225 mWatts  
POWER  
45 Volts  
VOLTAGE  
FEATURES  
• General purpose amplifier applications  
• NPN epitaxial silicon, planar design  
• Collector current IC = 500mA  
.119(3.00)  
.110(2.80)  
• Pb free product are available : 99% Sn above can meet RoHS  
environment substance directive request  
MECHANICALDATA  
.083(2.10)  
.066(1.70)  
.006(.15)  
.002(.05)  
Case: SOT-23, Plastic  
Terminals: Solderable per MIL-STD-750, Method 2026  
Approx. Weight: 0.008 gram  
Device Marking : BC817-16 : 8A  
BC817-25 : 8B  
.006(.15)MAX  
.020(.50)  
.013(.35)  
3
COLLECTOR  
BC817-40 : 8C  
Top View  
3
Collector  
1
BASE  
1
Base  
2
Emitter  
2
EMITTER  
MECHANICALDATA  
PARAMETER  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
SYMBOL  
Value  
UNIT  
V
V
V
CEO  
CBO  
EBO  
45  
50  
v
v
5.0  
500  
225  
v
Collector Current - Continuous  
IC  
mA  
mW  
Max Power Dissipation (Note 1)  
P
TOT  
Junction and Storage Temperature  
Range  
TJ  
, TSTG  
-55 to 150  
oC  
THERMALCHARACTERISTICS  
PARAMETER  
SYMBOL  
Value  
UNIT  
Thermal Resistance , Junction to Ambient  
RθJA  
556  
oC/W  
Note 1 : Transistor mounted on FR-5 board 1.0x0.75x0.062 in  
STAD-JUL.13.2005  
PAGE . 1  
o
ELECTRICAL CHARACTERISTICS(TJ=25 C,unless otherwise notes)  
PARAMETER  
SYMBOL  
MIN.  
TYP.  
MAX. UNIT  
V
(BR)CEO  
(BR)CES  
45  
50  
5.0  
-
-
-
-
-
-
V
V
Collector-Emitter Breakdown Voltage (Ic=10mA, IB=0)  
Collector-Emitter Breakdown Voltage (VEB=0V, Ic=10uA  
Emitter-Base Breakdown Voltage (IE=1.0uA,Ic=0)  
Emitter-Base Cutoff Current (VEB=5V)  
V
-
-
V
(BR)EBO  
V
I
I
EBO  
100  
nA  
Collector-Base Cutoff Current (VCB=20V,I  
E
=0)  
100  
5.0  
nA  
uA  
-
-
CBO  
-
J =150OC  
T
-
-
-
DC Current Gain  
(Ic=100mA,VCE=1V)  
BC817-16  
BC817-25  
BC817-40  
100  
160  
250  
250  
400  
600  
hFE  
-
40  
-
-
(Ic=500mA,Vc  
Collector-Emitter Saturation Voltage (Ic=500mA ,IB  
Base-Emitte Voltage (Ic=500mA,VCE 1.0V)  
Collector-Base Capacitance (VCB=10v,I =0,f=1MHz)  
Current Gain-Bandwidth Product (Ic=10mA,VcE=5V,f=100MHz)  
E=1V)  
=50mA)  
V
CE(SAT)  
-
-
-
0.7  
1.2  
-
V
V
=
V
BE(ON)  
-
-
E
C
CBO  
5.0  
-
pF  
MHz  
fT  
100  
-
ELECTRICAL CHARACTERISTICS CURVES  
300  
250  
200  
150  
100  
450  
400  
350  
300  
250  
200  
150  
100  
50  
50  
VCE = 1V  
VCE = 1V  
0
0
0.01  
0.1  
1
10  
100  
1000  
0.01  
0.1  
1
10  
100  
1000  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
Fig. 1. BC817-16 Typical hFE vs. IC  
Fig. 2. BC817-25 Typical hFE vs. IC  
700  
100  
600  
500  
400  
300  
200  
100  
0
CIB (EB)  
10  
COB (EB)  
VCE = 1V  
1
0.1  
1
10  
100  
0.01  
0.1  
1
10  
100  
1000  
Reverse Voltage, V (V)  
Collector Current, IC (mA)  
R
Fig. 3. BC817-40 Typical hFE vs. IC  
Fig. 4. Typical Capacitances  
STAD-JUL.13.2005  
PAGE . 2  
MOUNTING PAD LAYOUT  
ORDER INFORMATION  
• Packing information  
T/R - 12K per 13" plastic Reel  
T/R - 3K per 7" plastic Reel  
LEGAL STATEMENT  
IMPORTANT NOTICE  
This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation  
of the device in the application. The information will help the customer's technical experts determine that the device is  
compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed  
to be reliable and accurate. The specifications and information herein are subject to change without notice. New products  
and improvements in products and product characterization are constantly in process. Therefore, the factory should be  
consulted for the most recent information and for any special characteristics not described or specified.  
Copyright Pan Jit International Inc. 2003  
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright  
owner.  
The information presented in this document does not form part of any quotation or contract. The information presented is  
believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the  
publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
STAD-JUL.13.2005  
PAGE . 3  

相关型号:

BC817-40,215

BC817; BC817W; BC337 - 45 V, 500 mA NPN general-purpose transistors TO-236 3-Pin
NXP

BC817-40,235

BC817; BC817W; BC337 - 45 V, 500 mA NPN general-purpose transistors TO-236 3-Pin
NXP

BC817-40-13

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
DIODES

BC817-40-7

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
DIODES

BC817-40-7-F

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
BL Galaxy Ele

BC817-40-AE3-R

NPN GENERAL PURPOSE AMPLIFIER
UTC

BC817-40-GS18

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
VISHAY

BC817-40-HF

NPN Transistors
KEXIN

BC817-40-MR

TRANSISTOR BC817-40 MINIREEL 500PCS
ETC

BC817-40-Q

45 V, 500 mA NPN general-purpose transistorsProduction
NEXPERIA

BC817-40-TAPE-13

TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP

BC817-40-TAPE-7

TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP