BC850-A-AL3-R [UTC]
SWITCHING AND AMPLIFIER APPLICATION; 开关和放大器应用型号: | BC850-A-AL3-R |
厂家: | Unisonic Technologies |
描述: | SWITCHING AND AMPLIFIER APPLICATION |
文件: | 总2页 (文件大小:102K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BC846 ... BC850
BC846 ... BC850
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
NPN
NPN
Version 2006-06-02
Power dissipation – Verlustleistung
250 mW
2.9±0.1
1.1
Plastic case
Kunststoffgehäuse
SOT-23
(TO-236)
0.4
3
Type
Code
Weight approx. – Gewicht ca.
0.01 g
1
2
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1.9
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions - Maße [mm]
1 = B 2 = E 3 = C
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
BC847
BC850
BC848
BC849
BC846
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
B open
E open
C open
VCEO
VCBO
VEB0
Ptot
IC
65 V
80 V
45 V
50 V
30 V
30 V
5 V
6 V
250 mW 1)
Collector current – Kollektorstrom (dc)
100 mA
Peak Collector current – Kollektor-Spitzenstrom
ICM
200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 5 V, IC = 10 µA
Group A
Group B
Group C
hFE
hFE
hFE
–
–
–
90
150
270
–
–
–
VCE = 5 V, IC = 2 mA
Group A
Group B
Group C
hFE
hFE
hFE
110
200
420
180
290
520
220
450
800
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
VCEsat
–
–
90 mV
200 mV
250 mV
600 mV
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
VBEsat
–
–
700 mV
900 mV
–
–
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
BC846 ... BC850
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 10 mA
VBE
VBE
580 mV
–
660 mV
–
700 mV
720 mV
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 30 V, (E open)
VCE = 30 V, Tj = 125°C, (E open)
ICB0
ICB0
–
–
–
–
15 nA
5 µA
Emitter-Base cutoff current
VEB = 5 V, (C open)
IEB0
–
–
–
–
–
100 nA
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE =ie = 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Noise figure – Rauschzahl
fT
300 MHz
3.5 pF
9 pF
–
6 pF
–
CCBO
CEB0
VCE = 5 V, IC = 200 µA, RG = 2 kΩ
f = 1 kHz, Δf = 200 Hz
BC846 ... BC848
BC849 ... BC850
F
F
–
–
2 dB
1.2 dB
10 dB
4 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 420 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC856 ... BC859
BC846B = 1B
Marking of available current gain
groups per type
Stempelung der lieferbare Stromverstärkungs-
gruppen pro Typ
BC846A = 1A
BC847A = 1E
BC848A = 1J
BC847B = 1F
BC848B = 1K
BC849B = 2B
BC850B = 2F
BC847C = 1G
BC848C = 1L
BC849C = 2C
BC850C = 2G
2
1
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
http://www.diotec.com/
© Diotec Semiconductor AG
相关型号:
BC850-B
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
SAMSUNG
BC850-C
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3
INFINEON
BC850-C
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
SAMSUNG
BC850-T
TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BC850-TAPE-13
TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BC850-TAPE-7
TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
©2020 ICPDF网 联系我们和版权申明