BC850A(SOT-23) [UTC]
Small Signal Bipolar Transistor, 0.1A I(C), NPN;
| 型号： | BC850A(SOT-23) |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), NPN 开关 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC BC846/BC847/BC848/BC849/BC850
NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
APPLICATION
FEATURES
*Suitable for automatic insertion in thick and thin-film
circuits.
*Complement to BC856 … BC860
2
1
3
SOT-23
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
BC846
80
50
30
V
V
V
BC847 / BC850
BC848 / BC849
Collector-Emitter Voltage
VCEO
VEBO
BC846
65
45
30
V
V
BC847 / BC850
BC848 / BC849
Emitter-Base Voltage
BC846 / BC847
BC848 / BC849 / BC850
6
5
V
V
Collector Current (DC)
Ic
Pc
Tj
100
310
150
mA
mW
°C
Collector Dissipation
Junction Temperature
Storage Temperature
Tstg
-65 ~ +150
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted)
PARAMETER
Collector Cut-Off Current
DC Current Gain
SYMBOL
ICBO
TEST CONDITIONS
VCB=30V, IE=0
VCE=5.0V, Ic=2.0mA
MIN
TYP
MAX UNITS
15
nA
hFE
110
800
250
600
Collector-Emitter Saturation
VCE(sat) Ic=10mA,IB=0.5mA
90
200
mV
mV
Voltage
Ic=100mA,IB=5.0mA
1
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R206-027,A
UTC BC846/BC847/BC848/BC849/BC850
NPN EPITAXIAL SILICON TRANSISTOR
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
700
900
660
MAX UNITS
Collector-Base Saturation Voltage
VBE(sat) Ic=10mA,IB=0.5mA
mV
mV
Ic=100mA,IB=5.0mA
Base-Emitter On Voltage
VBE(on) VCE=5.0V,Ic=2.0mA
VCE=5.0V,Ic=10mA
580
700
720
mV
mV
Current Gain Bandwidth Product
fT
VCE=5.0V,Ic=10mA
f=100MHz
300
MHz
Output Capacitance
Input Capacitance
Noise Figure:
BC846/BC847/BC848
BC849/BC850
BC849
Cob
Cib
NF
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
3.5
9
6
pF
pF
VCE=5V, Ic=200µA,
f=1KHz, RG=2KΩ
VCE=5V, IC=200µA,
RG=2KΩ, f=30~15000Hz
2
10
4
4
3
dB
dB
dB
dB
1.2
1.4
1.4
BC850
Classification of hFE
RANK
A
B
C
RANGE
110-220
200-450
420-800
Marking Code
P/N
RANK
MARK
8AA
8BA
8CA
8DA
8EA
RANK
MARK
8AB
8BB
8CB
8DB
8EB
RANK
MARK
BC846
BC847
BC848
BC849
BC850
A
A
A
A
A
B
B
B
B
B
C
C
C
C
C
8AC
8BC
8CC
8DC
8EC
2
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R206-027,A
UTC BC846/BC847/BC848/BC849/BC850
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
3
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R206-027,A
UTC BC846/BC847/BC848/BC849/BC850
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
4
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R206-027,A
相关型号：
BC850AD87Z
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
BC850AL99Z
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
BC850ALT3
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
MOTOROLA
BC850AS62Z
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
BC850B
NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)
INFINEON
©2020 ICPDF网 联系我们和版权申明