BCP69-16-AA3-F-R [UTC]
Transistor;
| 型号： | BCP69-16-AA3-F-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
BCP69
PNP EPITAXIAL SILICON TRANSISTOR
PNP MEDIUM POWER
TRANSISTOR
ꢀ
FEATURES
1
* High current (max. 1 A)
* Low voltage (max. 20 V).
* Complementary to UTC BCP68
SOT-223
ꢀ
APPLICATIONS
* General purpose switching and amplification
* Power applications such as audio output stages.
*Pb-free plating product number:BCP69L
ꢀ
ORDERING INFORMATION
Order Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
1
2
3
BCP69-xx-AA3-F-R
BCP69L-xx-AA3-F-R SOT-223
B
C
E
Tape Reel
BCP69L-xx-AA3-F-R
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(1) R: Tape Reel
(2) refer to Pin Assignment
(3) AA3: SOT-223
(4) xx: refer to Classification of hFE
(5)Lead Plating
(5) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 3
QW-R207-009,C
BCP69
PNP EPITAXIAL SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATING (Ta=25°C , unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage (Open Emitter)
Collector-Emitter Voltage (Open Base)
Emitter-Base Voltage (Open Collector)
Collector Current (DC)
-32
-20
V
-5
V
-1
A
Peak Collector Current
ICM
-2
A
Peak Base Current
IBM
-200
mA
W
℃
℃
℃
Total Power Dissipation, Ta ≤ 25℃
Junction Temperature
PD
1.35
TJ
150
Operating Ambient Temperature
Storage Temperature
TOPR
TSTG
-45 ~ +150
-65 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
THERMAL DATA
PARAMETER
Thermal Resistance From Junction To Ambient (Note 1)
SYMBOL
RATINGS
91
UNIT
K/W
θJA
ꢀ
ELECTRICAL CHARACTERISTICS (TJ = 25℃, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
-500 mV
Collector-Emitter Saturation Voltage
VCE(SAT) IC = -1A, IB = -100mA
IC = -5mA, VCE = -10V
VBE
-620
mV
V
Base-Emitter Voltage
IC = -1A, VCE = -1V
-1
IE = 0, VCB = -25V
ICBO
-100 nA
-10 µA
Collector Cut-off Current
Emitter Cut-off Current
IE = 0, VCB = -25V, TJ = 150℃
IEBO
hFE
IC = 0, VEB = -5V
-100 nA
IC = -5mA, VCE = -10V
50
85
60
DC Current Gain
IC = -500mA, VCE = -1V
375
IC = -1A, VCE = -1V
Collector Capacitance
Transition Frequency
DC current gain ratio of the
complementary pairs
CC
fT
IE = ie = 0, VCB = -5V, f = 1MHz
IC = -10mA, VCE = -5V, f = 100MHz
48
pF
40
MHz
hFE1
hFE2
|IC| = 0.5A, |VCE| = 1V
1.6
ꢀ
CLASSIFICATION OF hFE
RANK
16
25
160~375
RANGE
100~250
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R207-009,C
www.unisonic.com.tw
BCP69
PNP EPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS
DC Current Gain(Typical Values)
400
VCE = -1V
300
200
100
0
10 -1
-1
-10
-102
-103
-104
IC (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R207-009,C
www.unisonic.com.tw
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