BCX70L-AE3-R [UTC]
Small Signal Bipolar Transistor,;
| 型号： | BCX70L-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor, 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
BCX70
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE
TRANSISTOR
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-23
Packing
1
2
3
Lead Free
Halogen Free
BCX70G-AE3-R
C: Collector
B
E
C
BCX70L-AE3-R
Tape Reel
Note: Pin Assignment: B: Base E: Emitter
MARKING
L: Lead Free
G: Halogen Free
CG
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R206-080.B
BCX70
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
45
45
5
V
V
200
mA
mW
°C
Collector Power Dissipation
Storage Temperature
PC
350
TSTG
-40 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
325
UNIT
°C/W
Junction to Ambient
θJA
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCEO
TEST CONDITIONS
IC=2.0mA, IB=0
MIN
45
5
TYP
MAX UNIT
Collector-Emitter Breakdown
Voltage
V
V
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
BVEBO
ICES
IE=1.0µF, IC=0
VCE=32V, VBE=0
20
20
nA
nA
IEBO
VEB=4V, IC=0
VCE=5V, IC=10µA
100
380
100
DC Current Gain
hFE
VCE=5V, IC=2.0mA
VCE=1V, IC=50mA
IC=10mA, IB=0.25mA
IC=50mA, IB=1.25mA
IC=10mA, IB=0.25mA
IC=50mA, IB=1.25mA
IC=2.0mA, VCE=5V
IC=10mA, VCE=5V, f=100MHz
VCB=10V, IE=0, f=1MHz
630
Collector-Emitter Saturation
Voltage
0.35
0.55
0.85
1.05
0.75
V
V
VCE (sat)
VBE (sat)
0.6
0.7
V
Base-Emitter Saturation Voltage
V
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
VBE (on)
fT
0.55
125
V
MHz
pF
Cob
4.5
6
V
CE=5V, IC=0.2mA, RS=2KΩ
Noise Figure
Turn On Time
Turn Off Time
NF
tON
dB
ns
ns
f=1KHz
IC=10mA, IB1=1.0mA
150
800
VBB=3.6V, IB2=1.0mA,
tOFF
R1=R2=5KΩ, RL=990Ω
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R206-080.B
www.unisonic.com.tw
BCX70
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R206-080.B
www.unisonic.com.tw
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