BD138L-06-T60-K [UTC]
Power Bipolar Transistor;
| 型号： | BD138L-06-T60-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Bipolar Transistor |
| 文件： | 总4页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
BD136-138-140
PNP EPITAXIAL SILICON TRANSISTOR
PNP SILICON TRANSISTOR
DESCRIPTION
1
1
The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP
TO-251
SOT-223
transistor, designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
The complementary NPN types are the BD135/BD137/ BD139.
1
1
TO-126C
TO-126
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
1
E
B
B
E
B
B
E
E
B
2
C
C
C
C
C
C
C
C
C
3
B
E
E
B
E
E
B
B
E
Lead Free
BD136L-xx-T60-K
BD136L-xx-TM3-T
-
Halogen Free
BD136G-xx-T60-K
BD136G-xx-TM3-T
BD138G-xx-AA3-R
BD138G-xx-T60-K
BD138G-xx-TM3-T
BD140G-xx-AA3-R
BD140G-xx-T60-K
BD140G-xx-T6C-K
BD140G-xx-TM3-T
TO-126
TO-251
SOT-223
TO-126
TO-251
SOT-223
TO-126
TO-126C
TO-251
Bulk
Tube
Tape Reel
Bulk
BD138L-xx-T60-K
BD138L-xx-TM3-T
-
Tube
Tape Reel
Bulk
BD140L-xx-T60-K
BD140L-xx-T6C-K
BD140L-xx-TM3-T
Bulk
Tube
Note: Pin Assignment: E: Emitter
C: Collector
B: Base
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Copyright © 2014 Unisonic Technologies Co., LTD
QW-R204-013.E
BD136-138-140
PNP EPITAXIAL SILICON TRANSISTOR
MARKING
MARKING
BD138
PACKAGE
BD136
-
BD140
SOT-223
TO-251
TO-126
TO-126C
UNISONIC TECHNOLOGIES CO., LTD
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BD136-138-140
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
BD136
SYMBOL
VCBO
RATINGS
UNIT
V
-45
-60
Collector-Base Voltage
BD138
BD140
BD136
BD138
BD140
-80
-45
Collector-Emitter Voltage
VCEO
-60
V
-80
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
VEBO
IC
ICM
IB
-5
V
V
A
A
-1.5
-3
-0.5
8
SOT-223
TC≦25°C TO-126/TO-126C
TO-251
Power Dissipation
PD
12.5
15
W
Junction Temperature
Storage Temperature
TJ
150
-40 ~ +150
°C
°C
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°C ~70°C operating temperature
range and assured by design from –20°C ~85°C.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
155
UNIT
°C/W
SOT-223
Junction to Ambient
Junction to Case
TO-126/TO-126C
TO-251
θJA
100
83
SOT-223
15.5
10
TO-126/TO-126C
TO-251
θJC
°C/W
8.3
Note: Transistor mounted on an FR4 printed circuit board.
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCEO(SUS)
TEST CONDITIONS
IC =-30mA, IB=0 (Note)
CB =-30 V, IE=0
MIN TYP MAX UNIT
-45
BD136
BD138
BD140
Collector-Emitter
Sustaining Voltage
-60
-80
V
V
-0.1
-10
-10
Collector Cut-off Current
Emitter Cut- off Current
ICBO
μA
μA
VCB =-30 V, IE=0, TC = 125C
VEB = -5 V, IC=0
IEBO
hFE1
hFE2
hFE3
VCE=-2V, IC =-5mA,
VCE=-2V, IC =-0.5A
25
25
40
DC Current Gain
VCE=-2V, IC =-150mA
250
-0.5
-1
Collector-Emitter Saturation
Voltage
VCE(SAT)
IC =-0.5A, IB = -0.05A (Note)
V
V
Base-Emitter Voltage
VBE
IC =-0.5A, VCE =-2 V (Note)
Note: Pulsed: Pulse duration ≦ 300μs, duty cycle 1.5 %
CLASSIFICATION OF hFE3
RANK
6
10
16
100~250
RANGE
40~100
63~160
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-013.E
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BD136-138-140
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-013.E
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