BD139L-10-T6S-K [UTC]
Power Bipolar Transistor,;
| 型号： | BD139L-10-T6S-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Bipolar Transistor, |
| 文件： | 总3页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
BD139
NPN SILICON TRANSISTOR
NPN POWER TRANSISTORS
FEATURES
* High current (max.1.5A)
* Low voltage (max.80V)
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
E
E
B
2
C
C
C
3
B
B
E
BD139L-xx-T60-K
BD139L-xx-T6S-K
BD139L-xx-TM3-T
BD139G-xx-T60-K
BD139G-xx-T6S-K
BD139G-xx-TM3-T
TO-126
TO-126S
TO-251
Bulk
Bulk
Tube
Note: Pin Assignment: E: Emitter C: Collector B: Base
BD139L-xx-T60-K
(1) K: Bulk, T: Tube
(1)Packing Type
(2)Package Type
(3)Rank
(2) T60: TO-126, T6S: TO-126S, TM3: TO-251
(3) refer to hFE
(4)Green Package
(4) L: Lead Free, G: Halogen Free and Lead Free
MARKING
TO-126 / TO-126S
TO-251
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R204-007.E
BD139
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current
Peak Base Current
100
80
5
V
V
1.5
2
A
ICM
A
lBM
1
A
TO-126/ TO-126S
TO-251
1.25
W
W
°C
°C
°C
Power Dissipation (Ta=25°C)
PD
1
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
TOPR
TSTG
-65~+150
-65~+150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
ICBO
TEST CONDITIONS
IE=0, VCB=30V
MIN TYP MAX UNIT
100 nA
Collector Cut-Off Current
Emitter Cut-Off Current
IE=0, VCB=30V, TJ=125°C
IC=0, VEB=5V
10
μA
IEBO
100 nA
IC=5mA
40
63
DC Current Gain
VCE=2V (See Fig.1)
IC =150mA
IC =500mA
250
hFE
25
BD139-10
BD139-16
63
160
250
DC Current Gain
IC =150mA, VCE=2V (See Fig.1)
100
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
VCE(SAT) IC =500 mA, IB=50mA
0.5
1
V
V
VBE
fT
IC =500 mA, VCE=2V
Transition Frequency
IC =500 mA, VCE=5V, f=100MHz
190
MHz
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R204-007.E
www.unisonic.com.tw
BD139
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R204-007.E
www.unisonic.com.tw
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