BF422L-T92-K [UTC]

Small Signal Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE PACKAGE-3;
BF422L-T92-K
型号: BF422L-T92-K
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Small Signal Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE PACKAGE-3

晶体管
文件: 总4页 (文件大小:310K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
BF422  
NPNEPITAXIAL SILICON TRANSISTOR  
HIGH VOLTAGE TRANSISTOR  
FEATURES  
* Collector-Emitter Voltage: VCEO=250V.  
* Complementary to UTC BF423.  
1
TO-92  
ORDERING INFORMATION  
Ordering Number  
Lead Free  
Pin Assignment  
Package  
Packing  
Halogen Free  
BF422G-T92-B  
BF422G-T92-K  
1
E
E
2
C
C
3
B
B
BF422L-T92-B  
TO-92  
TO-92  
Tape Box  
Bulk  
BF422L-T92-K  
www.unisonic.com.tw  
Copyright © 2013 Unisonic Technologies Co., LTD  
1 of 4  
QW-R201-063.C  
BF422  
NPNEPITAXIAL SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATING (TA=25°C)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
250  
250  
5
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-base voltage  
Collector current (DC)  
collector current (Peak)  
base current  
V
V
50  
mA  
mA  
mA  
mW  
ICP  
100  
50  
IB  
Collector Power dissipation  
Junction Temperature  
Storage Temperature  
PC  
625  
TJ  
150  
°C  
°C  
TSTG  
-40 ~ +150  
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. The device is guaranteed to meet performance specification within 0°C ~70°C operating temperature range  
and assured by design from –20°C ~85°C.  
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
ICBO  
TEST CONDITIONS  
VCB= 200V, IE=0  
MIN TYP MAX UNIT  
Collector Cut-Off Current  
Emitter Cut-Off Current  
DC current gain  
10  
50  
nA  
nA  
IEBO  
VEB= 5V, IC=0  
hFE  
VCE=20V, IC=25mA  
50  
60  
Collector-Emitter Saturation Voltage  
Base-Emitter Voltage  
VCE(SAT) IC= 30mA, IB= 5mA  
0.6  
1.6  
V
V
VBE  
fT  
VCE=-20V, IC=25mA  
VCE= 10V , IC= 10mA  
VCB= 30V, IE=0, f=1MHz  
0.75  
Transition frequency  
MHz  
pF  
Reverse Transfer Capacitance  
Cre  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R201-063.C  
www.unisonic.com.tw  
BF422  
NPNEPITAXIAL SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R201-063.C  
www.unisonic.com.tw  
BF422  
NPNEPITAXIAL SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS(Cont.)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all UTC products described or contained herein.  
UTC products are not designed for use in life support appliances, devices or systems where malfunction  
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in  
part is prohibited without the prior written consent of the copyright owner. The information presented in  
this document does not form part of any quotation or contract, is believed to be accurate and reliable  
and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R201-063.C  
www.unisonic.com.tw  

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