BSS138L-AL3-R [UTC]
N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE; N沟道逻辑电平增强模式型号: | BSS138L-AL3-R |
厂家: | Unisonic Technologies |
描述: | N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE |
文件: | 总3页 (文件大小:156K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
BSS138
Preliminary
Power MOSFET
N-CHANNEL LOGIC LEVEL
ENHANCEMENT MODE
DESCRIPTION
This device employs advanced MOSFET technology and
features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the
overall efficiency of DC/DC converters and allows operation to higher
switching frequencies.
FEATURES
* RDS(ON)=0.7Ω @ VGS=10V
* RDS(ON)=1Ω @ VGS=4.5V
* Low Capacitance
* Low Gate Charge
* Fast Switching Capability
* Avalanche Energy Specified
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
S
S
2
3
D
D
BSS138L-AE2-R
BSS138L-AL3-R
BSS138G-AE2-R
BSS138G-AL3-R
SOT-23-3
SOT-323
G
G
Tape Reel
Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
MARKING
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-271.e
BSS138
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
50
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
VGSS
±20
V
DC
0.22
Continuous Drain Current
Power Dissipation
ID
A
Pulse
0.88
SOT-23-3
SOT-323
0.36
PD
W
0.15
Junction Temperature
Storage Temperature
TJ
+150
℃
℃
TSTG
-55 ~ +150
Note:Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
350
UNIT
SOT-23-3
SOT-323
Junction to Ambient
θJA
℃/W
833
ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
50
V
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C
72
mV/℃
VDS=50V, VGS=0V
0.5
0.1
Zero Gate Voltage Drain Current
IDSS
IGSS
µA
VDS=30V, VGS=0V
VDS=0V, VGS=±20V
Gate–Body Leakage, Forward
ON CHARACTERISTICS (Note)
Gate-Threshold Voltage
±100 nA
VGS(TH)
VDS=VGS, ID=1m A
0.8 1.3 1.5
-2
V
Gate Threshold Voltage Temperature
Coefficient
ΔVGS(TH)/ΔTJ ID=1mA, Referenced to 25°C
mV/°C
VGS=10 V, ID=0.22A
RDS(ON)
0.7 3.5
1.0 6.0
0.2
Static Drain–Source On–Resistance
Ω
VGS=4.5 V, ID=0.22A
On-State Drain Current
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
ID(ON)
gFS
VGS=10 V, VDS=5V
VDS=10V, ID=0.22A
A
S
0.12 0.5
CISS
COSS
CRSS
27
13
6
pF
pF
pF
Output Capacitance
V
DS=25V, VGS=0V, f=1MHz
DS=25V, VGS=10V, ID=0.22A
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note)
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
1.7 2.4
0.1
nC
nC
nC
ns
ns
ns
ns
Gate Source Charge
V
Gate Drain Charge
0.4
Turn-ON Delay Time
2.5
9
5
Turn-ON Rise Time
18
36
14
VDD=30V, ID=0.29A,VGS=10V,
RG=6Ω,
Turn-OFF Delay Time
Turn-OFF Fall-Time
tD(OFF)
tF
20
7
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Max. Diode Forward Current
VSD
IS
VGS= 0V, IS=0.44A (Note)
0.8 1.4
0.22
V
A
Note: Pulse test, pulse width ≤ 300us, duty cycle≤ 2%
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-271.e
www.unisonic.com.tw
BSS138
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-271.e
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