BT151L-5-TN3-R_技术文档

UNISONIC TECHNOLOGIES CO., LTD

BT151

SCR

SCRS

DESCRIPTION

1

Passivated thyristors in a plastic envelope, intended for use in

TO-220

TO-252

applications requiring high bidirectional blocking voltage capability

and high thermal cycling performance. Typical applications include

motor control, industrial and domestic lighting, heating and static

switching.

SYMBOL

1

ORDERING INFORMATION

Pin Assignment

Order Number

Package

Packing

1

K

2

A

3

Lead Free

Halogen Free

BT151L-5-TA3-T

BT151L-5-TN3-R

BT151L-6-TA3-T

BT151L-6-TN3-R

BT151L-8-TA3-T

BT151L-8-TN3-R

BT151G-5-TA3-T

BT151G-5-TN3-R

BT151G-6-TA3-T

BT151G-6-TN3-R

BT151G-8-TA3-T

BT151G-8-TN3-R

TO-220

TO-252

TO-220

TO-252

TO-220

TO-252

G

Tube

Tape Reel

Tube

Tape Reel

Tube

Tape Reel

Note: Pin assignment: K: CATHODE

A: ANODE

G: GATE

www.unisonic.com.tw

1 of 5

QW-R301-017,C

BT151

SCR

ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

V

BT151-5

BT151-6

BT151-8

500 (Note 1)

Repetitive Peak Off-State Voltages

V_DRM,V_RRM

650 (Note 1)

800

7.5

12

Average On-State Current (half sine wave; Tmb ≤109°C)

I_T(AV)

A

RMS on-State Current (all conduction angles)

I_T(RMS)

Non-Repetitive Peak On-State Current

(half sine wave; T_J= 25 °C prior to surge)

I²t for Fusing (t = 10 ms)

t = 10 ms

t = 8.3 ms

100

110

50

I_TSM

I²t

A

A²s

A/μs

Repetitive Rate of Rise of On-State Current After Triggering

(I_TM= 20 A; I_G= 50 mA; dI_G/dt = 50 mA/μs)

Peak Gate Current

d_IT/dt

50

I_GM

2

A

V

Peak Gate Voltage

V_GM

V_RGM

P_GM

P_G(AV)

T_stg

5

Peak Reverse Gate Voltage

5

V

Peak Gate Power

W

°C

Average Gate Power (Over any 20 ms period)

Storage Temperature

0.5

-40 ~150

125

Operating Junction Temperature

T_J

Note: 1. Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor

may switch to the on-state. The rate of rise of current should not exceed 15A/μs.

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

θ_JMb

RATINGS

UNIT

K/W

Junction to Mounting Base

Junction to Ambient

1.3

60

θ_JA

STATIC CHARACTERISTICS (T_J=25℃,unless otherwise stated)

PARAMETER

SYMBOL

CONDITIONS

MIN

0.25

TYP

2

MAX UNIT

Gate Trigger Current

Latching Current

Holding Current

I_GT

I_L

V_D= 12 V, I_T= 0.1 A

15

40

mA

V

V_D= 12 V, I_GT= 0.1 A

I_T= 23 A

10

7

I_H

20

On-State Voltage

V_T

1.4

0.6

0.4

0.1

1.75

1.5

V_D= 12 V, I_T= 0.1 A

V_D= V_DRM(max), I_T= 0.1 A, T_J= 125 °C

Gate Trigger Voltage

V_GT

V

Off-State Leakage Current

I_D, I_RV_D= V_DRM(max), V_R= V_RRM(max),T_J= 125°C

0.5

mA

DYNAMIC CHARACTERISTICS(T_J=25℃,unless otherwise stated)

PARAMETER

SYMBOL

CONDITIONS

MIN

50

TYP

130

MAX UNIT

V

_DM= 67% V_DRM(max)

,

Gate open circuit

_GK= 100Ω

Critical Rate of Rise of

Off-State Voltage

dV_D/dt

V/μs

T_J= 125 °C,

exponential waveform;

I_TM= 40 A, V_D= V_DRM(max), I_G= 0.1 A,

R

200

1000

2

Gate Controlled Turn-on

Time

t_GT

μs

dI_G/dt = 5 A/μs

V_D= 67% V_DRM(max), T_J= 125°C;

Circuit Commutated

Turn-off tIme

t_Q

I

_TM= 20 A, V_R= 25 V, dI_TM/dt = 30 A/μs,

70

dV_D/dt = 50 V/μs, R_GK= 100 Ω

UNISONIC TECHNOLOGIES CO., LTD

2 of 5

QW-R301-017,C

www.unisonic.com.tw

BT151

SCR

TYPICAL CHARACTERISTICS

Fig 1. Maximum On-State Dissipation,

p_tot, Versus Average On-State Current,

I_T(AV), Where a=form factor=I_T(RMS)/I_T(AV)

Fig 2. Maximum Permissible Non-Repetitive Peak

On-State Current ITSM,Versus Pulse Width tp^,for

Sinusoidal Currents, tp ≤ 10ms

Ptot/W

Conduction

angle

Tmb(max)/°C

ITSM/A

15

105.5

1000

form

factor

a

α=1.57

degrees

1.9

4

30

60

90

120

180

2.2

2.8

2.2

1.9

1.57

10

112

2.8

dIT/dt limit

I_TSM

4

100

10

I_T

5

0

118.5

125

T

time

α

T_Jinitial=25°C max

8

7

0

1

2

3

4

5

6

10µs

100µs

10ms

1ms

IT(AV)/A

T/s

Fig 3. Maximum Permissible Rms Current

lT(RMS), Versus Mounting Base

Temperature Tmb

Fig 4. Maximum Permissible Non-Repetitive

Peak On-State Current I_TSM,Versus Number Of

Cycles,For Sinusoidal Currents, f=50HZ

IT(RMS)/A

ITSM/A

120

15

109°C

I_TSM

I_T

100

80

60

40

20

T

time

10

T_Jinitial=25°C max

5

0

-50

50

100

150

1

10

100

1000

Tmb/°C

Number Of Half Cycles At 50Hz

UNISONIC TECHNOLOGIES CO., LTD

3 of 5

QW-R301-017,C

www.unisonic.com.tw

BT151

SCR

TYPICAL CHARACTERISTICS (Cont.)

Fig 8. Normalised Latching Current

I_L(T_J)/I_L(25°C),

Versus Junction Temperature T_J

I_L(T_J)

Fig 7. Normalised Gate Trigger Current I_GT(T_J)/

I

_GT(25°C), Versus Junction Temperature T_J

I_GT(T_J)

I_GT(25°C)

I_L(25°C)

3

2.5

2

2.5

2

1.5

1

1.5

1

0.5

0

0.5

0

-50

50

T_J/°C

100 150

0

50

T_J/°C

-50

100

150

Fig 9. Normalised Holding Current I_H(T_J)/I_H(25 ),

Versus Junction Temperature T_J

Fig 10. Typical and Maximum On-State

Characteristic

I_H(T_J)

I_H(25°C)

I_T/A

30

3

T_J=125°C

25

2.5

2

T_J=25°C

20

15

10

5

typ

max

1.5

1

0.5

0

0.5

1

1.5

2

-50

50

100

150

0

VT/V

T_J/°C

Fig 12. Typical, Critical Rate Of Rise

Of Off-State Voltage, dV_D/dt Versus

Junction Temperature T_J

Fig 11.Transient Thermal Impedance Zthj-mb,

Versus Pulse Width tp

Zth j-mb(K/W)

10

dVD/dt(V/µs)

10000

1

1000

R_GK=100Ω

0.1

tp

PD

100

10

0.01

t

gate open circuit

50 100

0.001

10us 0.1ms

0

10s

1ms

1s

150

10ms 0.1s

tp/s

T_J/°C

UNISONIC TECHNOLOGIES CO., LTD

4 of 5

QW-R301-017,C

www.unisonic.com.tw

BT151

SCR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

5 of 5

QW-R301-017,C

www.unisonic.com.tw


型号：	BT151L-5-TN3-R
厂家：	Unisonic Technologies
描述：	SCRS 可控硅可控硅
文件：	总5页 (文件大小：207K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BT151L-5-TN3-R [UTC]

相关型号：

BT151L-6-TA3-T

BT151L-6-TN3-R

BT151L-8-TA3-T

BT151L-8-TN3-R

BT151M

BT151M-500R

BT151M-600R

BT151M-650R

BT151M-800R

BT151M650R

BT151MSERIES

BT151S