BT169B [UTC]
SCRS; 可控硅型号: | BT169B |
厂家: | Unisonic Technologies |
描述: | SCRS |
文件: | 总6页 (文件大小:340K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
BT169
SCR
SCRS
DESCRIPTION
Passivated, sensitive gate thyristors in a plastic envelope,
intended for use in general purpose switching and phase control
applications. These devices are intended to be interfaced
directly to microcontrollers, logic integrated circuits and other
low power gate trigger circuits.
SYMBOL
Lead-free:
BT169xL
Halogen-free: BT169xG
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free
Halogen Free
BT169BG-T92-B
BT169BG-T92-K
BT169DG-T92-B
BT169DG-T92-K
BT169EG-T92-B
BT169EG-T92-K
BT169GP-T92-B
BT169GP-T92-K
BT169HG-T92-B
BT169HG-T92-K
1
K
K
K
K
K
K
K
K
K
K
2
3
A
A
A
A
A
A
A
A
A
A
BT169B-T92-B
BT169B-T92-K
BT169D-T92-B
BT169D-T92-K
BT169E-T92-B
BT169E-T92-K
BT169G-T92-B
BT169G -T92-K
BT169H-T92-B
BT169H -T92-K
BT169BL-T92-B
BT169BL-T92-K
BT169DL-T92-B
BT169DL-T92-K
BT169EL-T92-B
BT169EL-T92-K
BT169GL-T92-B
BT169GL-T92-K
BT169HL-T92-B
BT169HL-T92-K
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
G
G
G
G
G
G
G
G
G
G
Tape Box
Bulk
Tape Box
Bulk
Tape Box
Bulk
Tape Box
Bulk
Tape Box
Bulk
Note: Pin Assignment: C:CATHODE G:GATE A:ANODE
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Copyright © 2008 Unisonic Technologies Co., Ltd
QW-R301-015,C
BT169
SCR
QUICK REFERENCE DATA
BT169B BT169D BT169E BT169G BT169H
UNIT
MAX
V
PARAMETER
SYMBOL
MAX
200
0.5
0.8
8
MAX
400
0.5
0.8
8
MAX
500
0.5
0.8
8
MAX
600
0.5
0.8
8
MAX
800
0.5
0.8
8
Repetitive Peak Off-State Voltages
Average On-State Current
VDRM, VRRM
IT(AV)
IT(RMS)
ITSM
A
RMS On-State Current
A
Non-Repetitive Peak On-State Current
A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
V
BT169B
BT169D
BT169E
BT169G
BT169H
200
400
500
600
800
5
Repetitive Peak Off-State Voltages(Note 2)
VDRM,VRRM
Peak Gate Voltage
VGM
VRGM
IGM
V
V
A
Peak Reverse Gate Voltage
Peak Gate Current
5
1
Average On-State Current
(Half Sine Wave, TLEAD≦83°C)
RMS On-State Current (All Conduction Angles)
IT(AV)
IT(RMS)
ITSM
0.5
A
0.8
8
A
A
Non-Repetitive Peak On-State Current
(Half Sine Wave, TJ=25°C Prior to Surge)
I2t For Fusing (t=10ms)
t=10ms
t=8.3ms
9
A
A2S
I2t
0.32
Repetitive Rate of Rise of On-State Current After
Triggering (ITM=2A,IG=10mA, dIG/dt=100mA/μs)
Peak Gate Power
dIT/dt
50
A/μs
PGM
PG(AV)
TJ
2
0.1
W
W
Average Gate Power (Over any 20 ms period)
Junction Temperature
+125
°C
°C
Storage Temperature
TSTG
-40 ~ +150
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the
thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
150
UNIT
Thermal Resistance Junction to Ambient (typ.)
Note: pcb mounted, lead length=4mm
θJA
°C /W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TSET CONDITIONS
MIN
TYP
MAX UNIT
STATIC CHARACTERISTICS
Gate Trigger Current
Latching Current
IGT
IL
VD=12V, IT=10 mA, gate open circuit
VD=12V, IGT=0.5mA, RGK=1kΩ
VD=12V,IGT=0.5mA, RGK=1kΩ
IT=1A
25
55
6
μA
mA
mA
V
2
2
Holding Current
IH
5
On-State Voltage
VT
1.2
1.35
VD=12V, IT=10mA, gate open circuit
VD=VDRM(MAX), IT=10mA, TJ=125°C,
gate open circuit
0.5
0.3
Gate Trigger Voltage
VGT
0.8
0.1
V
0.2
VD=VDRM(MAX), VR=VRRM(MA\X)
,
Off-State Leakage Current
ID,IR
0.05
mA
TJ=125°C, RGK=1kΩ
UNISONIC TECHNOLOGIES CO., LTD
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QW-R301-015,C
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BT169
SCR
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TSET CONDITIONS
MIN
500
TYP MAX UNIT
DYNAMIC CHARACTERISTICS
Ciritical Rate of Rise of Off-State
Voltage
V
DM=67% VDRM(MAX), TJ=125°C,
exponential waveform, RGK=1kΩ
TM=2A,VD=VDRM(MAX), IG=10mA,
dVD/dt
tgt
800
2
V/μs
μs
I
Gate Controlled Turn-On Time
dIG/dt=0.1A/μs
VD=67% VDRM(MAX), TJ=125°C,
Circuit Commutated Turn-Off
Time
tq
I
TM=1.6A,VR=35V, dITM/dt=30A/μs,
100
μs
VD/dt=2V/μs, RGK=1kΩ
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www.unisonic.com.tw
QW-R301-015,C
BT169
SCR
TYPICAL CHARACTERISTICS
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QW-R301-015,C
BT169
SCR
TYPICAL CHARACTERISTICS(Cont.)
Normalised Gate Trigger Current vs. Junction
Temperature
Typical And Maximum On-State Characteristic
5
4
3
3.0
2.5
2.0
TJ=125°C - - -
TJ= 25°C
VOUT=1.067V
Rs=0.187
typ
max
1.5
2
1.0
0.5
0
1
0
-50
0
50
100
150
0
0.5
1.0
1.5
VT (V)
2.0
2.5
Junction Temperature, TJ (°C)
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www.unisonic.com.tw
QW-R301-015,C
BT169
SCR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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