BT169G [UTC]
Silicon Controlled Rectifier, 0.8A I(T)RMS, 500mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-92;
| 型号： | BT169G |
| 厂家： | 
Unisonic Technologies |
| 描述： | Silicon Controlled Rectifier, 0.8A I(T)RMS, 500mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-92 栅 栅极 |
| 文件： | 总5页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC BT169
SCR
SCRs
DESCRIPTION
Passivated, sensitive gate thyristors in a plastic
envelope, intended for use in general purpose
switching and phase control applications. These
devices are intended to be interfaced directly to
microcontrollers, logic integrated circuits and other
low power gate trigger circuits.
1
TO-92
1:CATHODE 2:GATE 3:ANODE
QUICK REFERENCE DATA
BT169B
MAX
200
0.5
0.8
BT169D
MAX
400
0.5
0.8
BT169E
MAX
500
0.5
0.8
BT169G
MAX
600
0.5
0.8
UNIT
MAX
V
A
A
A
PARAMETER
SYMBOL
Repetitive peak off-state voltages
Average on-state current
RMS on-state current
VDRM, VRRM
IT(AV)
IT(RMS)
ITSM
Non-repetitive peak on-state current
8
8
8
8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak off-state voltages
SYMBOL
VDRM,VRRM
RATINGS
UNIT
V
BT169B
200*
400*
500*
600*
BT169D
BT169E
BT169G
Average on-state current
(Half sine wave, Tlead≦83°C)
IT(AV)
0.5
0.8
A
A
RMS on-state current
(All conduction angles)
Non-repetitive peak on-state current
(half sine wave, Tj=25°C prior to surge)
t=10ms
IT(RMS)
ITSM
A
8
9
0.32
t=8.3ms
I2t for fusing (t=10ms)
I2t
A2S
Repetitive rate of rise of on-state current after triggering
(ITM=2A,IG=10mA, dIG/dt=100mA/µs)
dIT/dt
50
A/µs
1
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R301-015,A
UTC BT169
SCR
PARAMETER
SYMBOL
IGM
RATINGS
UNIT
A
Peak gate current
1
Peak gate voltage
Peak reverse gate voltage
Peak gate power
VGM
VRGM
PGM
5
5
2
V
V
W
Average gate power (Over any 20 ms period)
Storage temperature
Operating junction temperature
PG(AV)
Tstg
Tj
0.1
-40~150
125
W
°C
°C
*Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15A/µs.
THERMAL RESISTANCES
PARAMETER
Thermal resistance junction to lead
Thermal resistance junction to ambient
(pcb mounted, lead length=4mm)
SYMBOL
Rth j-lead
MIN
TYP
150
MAX
60
UNIT
K/W
Rth j-a
K/W
STATIC ELECTRICAL CHARACTERISTICS (Tj=25°C unless otherwise stated)
PARAMETER
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
SYMBOL
TSET CONDITIONS
VD=12V, IT=10 mA, gate open circuit
VD=12V, IGT=0.5mA, RGK=1kΩ
VD=12V,IGT=0.5mA, RGK=1kΩ
IT=1A
VD=12V, IT=10mA, gate open circuit
VD=VDRM(max), IT=10mA , Tj=125°C,
gate open circuit
MIN
25
TYP MAX UNIT
IGT
IL
IH
VT
VGT
55
6
5
1.35
0.8
µA
mA
mA
V
2
2
1.2
0.5
0.3
0.2
V
Off-state leakage current
ID,IR
VD=VDRM(max), VR=VRRM(max),
Tj=125°C, RGK=1kΩ
0.05
0.1
mA
DYNAMIC ELECTRICAL CHARACTERISTICS (Tj=25°C unless otherwise stated)
PARAMETER
Ciritical rate of rise of off-state
voltage
SYMBOL
dVD/dt
TSET CONDITIONS
VDM=67% VDRM(max), Tj=125°C,
exponential waveform, RGK=1kΩ
ITM=2A,VD=VDRM(max), IG=10mA,
dIG/dt=0.1A/µs
VD=67% VDRM(max), Tj=125°C,
ITM=1.6A,VR=35V, dITM/dt=30A/µs,
VD/dt=2V/µs, RGK=1kΩ
MIN
500
TYP MAX UNIT
800
V/µs
Gate controlled turn-on time
tgt
tq
2
µs
Circuit commutated turn-off
time
100
µs
2
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R301-015,A
UTC BT169
SCR
FIG.4 Maximnum permissible non-repetitive peak
FIG.1 Maximum on-state dissipation, Ptot, versus
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50Hz.
average on-state current, IT(AV), where a=form
factor=IT(RMS) / IT(AV)
ITSM / A
Ptot / W
Tc(max) / C
α=1.57
10
8
0.8
77
83
conduction form
IT
ITSM
angle
factor
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
degrees
a
4
1.9
time
30
T
89
60
2.8
2.2
1.9
1.57
2.2
90
Tj initial=25°Cmax
120
180
95
6
4
2.8
101
4
107
113
2
0
α
119
125
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
1
10
100
1000
IF(AV) / A
Number of half cycles at 50Hz
FIG.2 Maximum permissible non-repetitive peak on-
state current ITSM,versus pulse width tp,for
sinusoidal currents, tp≦10ms.
FIG.5 Maximum permissible repetitive rms on-
state current IT(RMS), versus surge duration, for
sinusoidal currents, f= 50Hz; Tlead≦83°C
ITSM / A
IT(RMS) / A
1000
2.0
1.5
100
1.0
0.5
0
IT
ITSM
10
1
time
T
Tj initial=25°Cmax
10µs
100µs
1ms
10ms
T / s
0.01
0.1
1.0
10
surge duration / s
FIG.3 Maximum permissible rms current IT(RMS),
versus lead temperature, Tlead
FIG.6 Normalised gate trigger voltage VGT(Tj)/
VGT(25°C), versus junction temperature Tj
VGT(Tj)
IT(RMS) / A
1.0
VGT(25°C)
1.6
83°C
0.8
0.6
0.4
0.2
0
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
50
Tj / C
100
150
-50
0
50
100
150
Tlead / C
3
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R301-015,A
UTC BT169
SCR
FIG.7 Normalised gate trigger current IGT(Tj)/
FIG.10 Typical and maximum
on-state characteristic.
IGT(25°C), versus junction temperature Tj
IGT(Tj)
IT / A
VGT(25°C)
5
4
3
2
Tj=125°C- - -
3.0
Tj= 25°C
2.5
2.0
1.5
1.0
0.5
0
Vo=1.067V
typ
max
Rs=0.187Ω
1
0
-50
0
50
100
150
0
0.5
1.0
VT / V
1.5
2.0
2.5
Tj / C
FIG.8 Normalised latching current IL(Tj)/IL(25°C),
versus junction temperature Tj, RGK= 1KΩ
FIG.11 Transient thermal impedance Zth j-lead,
versus pulse width tp.
Zth j-lead (K/W)
IL(Tj)
100
10
IL(25°C)
3.0
2.5
2.0
1.5
1.0
0.5
0
1
PD
tp
0.1
t
-50
0
50
Tj / C
100
150
0.01
10us 0.1ms 1ms 10ms
tp / s
10s
1s
0.1s
FIG.9 Normalised holding current IH(Tj)/IH(25°C),
versus junction temperature Tj, RGK=1KΩ
FIG.12 Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
IH(Tj)
dVD/dt(V/us)
1000
IH(25°C)
3.0
2.5
2.0
1.5
1.0
0.5
0
RGK=1KΩ
100
10
1
-50
0
50
Tj / C
100
150
0
50
100
150
Tj / C
4
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R301-015,A
UTC BT169
SCR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
5
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R301-015,A
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