BU406A [UTC]
Transistor;![BU406A](http://pdffile.icpdf.com/pdf2/p00297/img/icpdf/BU406A_1795341_icpdf.jpg)
型号: | BU406A |
厂家: | ![]() |
描述: | Transistor |
文件: | 总3页 (文件大小:102K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UTCBU406
NPN EXPITAXIAL PLANAR TRANSISTOR
SILICON NPN SWITCHING
TRANSISTOR
DESCRIPTION
The UTC BU406 is a NPN expitaxial planar transistor. It is a
fast switching device for use in horizontal deflection output
stages of large screens MTV receivers with 110° CRT.
1
APPLICATION
*Horizontal deflection for monochrome TV
TO-220
1:BASE 2:COLLECTOR 3:EMITTER
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Base Voltage (IE=0)
Collector-Emitter Voltage (VBE=-1.5V)
Collector-Emitter Voltage (IB=0)
Emitter-Base Voltage (IC=0)
Collector Current
SYMBOL
VCBO
VCEV
VCEO
VEBO
IC
VALUE
UNIT
V
V
V
V
400
400
200
6
7
A
Collector Peak Current (repetitive)
Collector Peak Current (tp=10ms)
Base Current
Collector Dissipation (Tc≤25°C)
Max. Operating Junction Temperature
Storage Temperature
ICM
ICM
IB
Ptot
Tj
10
15
4
60
150
A
A
A
W
°C
°C
Tstg
-65 ~ +150
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Max
Max
2.08
70
°C/W
°C/W
Thermal Resistance Junction-ambient
ELECTRICAL CHARACTERISTICS (Ta=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
VCE=400V
MIN
TYP MAX UNIT
Collect Cutoff Current (VBE=0)
ICES
5
100
1
1
1
mA
µA
mA
mA
V
VCE=250V
VCE=250V
VBE=6V
Tcase=150°C
Emitter Cut-off Current (Ic=0)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
IEBO
VCE(sat)* IC=5A, IB=0.5A
VBE(sat)* IC=5A, IB=0.5A
1.2
240
V
hFE
fT
VCE=10V, IC=500mA
Ic=500mA, VCE=10V
70
10
Transition-Frequency
MHz
1
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R203-021,C
UTCBU406
NPN EXPITAXIAL PLANAR TRANSISTOR
PARAMETER
SYMBOL
Toff**
TEST CONDITIONS
Ic=5A, IBend=0.5A
MIN
TYP MAX UNIT
Turn-off Time
0.75
µs
Second Breakdown Collector Current
Is/b
VCE=40V, t=10ms
4
A
*Pulsed: Pulse duration=300µs, duty cycle 1.5%
HFE CLASSIFICATION
RANK
A
B
RANGE
70 ~ 120
110 ~ 240
TYPICAL CHARACTERISTICS
Static Characteristic
5
DC current Gain
1000
100
10
VCE = 5V
4
3
2
1
0
0
0
100
1000
10000
0
4
5
6
7
10
10
1
2
3
8
9
COLLECTOR CURRENT, IC (mA)
COLLECTOR-EMITTER VOLTAGE, VCE (V)
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector Output Capacitance
10000
1000
100
f = 1MHz
IC = 10IB
VBE(sat)
1000
100
10
10
1
VCE(sat)
1
10
100
0
10
100
1000
10000
COLLECTOR-BASE VOLTAGE, V CB (V)
COLLECTOR CURRENT, I C (mA)
2
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R203-021,C
UTCBU406
NPN EXPITAXIAL PLANAR TRANSISTOR
Safe Operating Area
Power Derating
80
70
60
50
40
IC Max. (Pulsed)
IC Max. (Continuous)
10
1
30
20
10
0
0.1
1
0
10
100
25 50 75 100 125 150 175
200
COLLECTOR-BASE VOLTAGE, VCE (V)
CASE TEMPERATURE, TC (℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
3
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R203-021,C
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00248/img/page/BU407C_1505608_files/BU407C_1505608_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00248/img/page/BU407C_1505608_files/BU407C_1505608_2.jpg)
BU406AF
Power Bipolar Transistor, 7A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
![](http://pdffile.icpdf.com/pdf2/p00248/img/page/BU407C_1505608_files/BU407C_1505608_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00248/img/page/BU407C_1505608_files/BU407C_1505608_2.jpg)
BU406AJ
Power Bipolar Transistor, 7A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
![](http://pdffile.icpdf.com/pdf2/p00299/img/page/BU407AN_1805696_files/BU407AN_1805696_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00299/img/page/BU407AN_1805696_files/BU407AN_1805696_2.jpg)
BU406AS
TRANSISTOR 7 A, 200 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power
ONSEMI
![](http://pdffile.icpdf.com/pdf2/p00299/img/page/BU407AN_1805696_files/BU407AN_1805696_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00299/img/page/BU407AN_1805696_files/BU407AN_1805696_2.jpg)
BU406AU
TRANSISTOR 7 A, 200 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power
ONSEMI
![](http://pdffile.icpdf.com/pdf2/p00299/img/page/BU407AN_1805696_files/BU407AN_1805696_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00299/img/page/BU407AN_1805696_files/BU407AN_1805696_2.jpg)
BU406BS
TRANSISTOR 7 A, 200 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power
ONSEMI
©2020 ICPDF网 联系我们和版权申明