BU406G-B-TQ2-T [UTC]
Power Bipolar Transistor;型号: | BU406G-B-TQ2-T |
厂家: | Unisonic Technologies |
描述: | Power Bipolar Transistor |
文件: | 总4页 (文件大小:207K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
BU406
NPN PLANAR TRANSISTOR
SILICON NPN SWITCHING
TRANSISTOR
DESCRIPTION
The UTC BU406 is a NPN expitaxial planar transistor. It is a
fast switching device for use in horizontal deflection output stages
of large screens MTV receivers with 110°C CRT.
ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
B
B
B
B
B
B
2
3
E
E
E
E
E
E
BU406L-x-TA3-T
BU406L-x-TF1-T
BU406L-x-TF3-T
BU406L-x-T3P-T
BU406L-x-TQ2-T
BU406L-x-TQ2-R
BU406G-x-TA3-T
BU406G-x-TF1-T
BU406G-x-TF3-T
BU406G-x-T3P-T
BU406G-x-TQ2-T
BU406G-x-TQ2-R
TO-220
TO-220F1
TO-220F
TO-3P
C
C
C
C
C
C
Tube
Tube
Tube
Tube
TO-263
TO-263
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R203-021.F
BU406
NPN PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
VCBO
VCEV
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage (IE=0)
Collector-Emitter Voltage (VBE=-1.5V)
Collector-Emitter Voltage (IB=0)
Emitter-Base Voltage (IC=0)
Collector Current
400
400
V
200
V
6
V
7
A
Collector Peak Current (repetitive)
Collector Peak Current (tp=10ms)
Base Current
ICM
10
A
ICM
15
A
IB
4
60
A
TO-220/TO-263
TO-220F/TO-220F1
TO-3P
Collector Dissipation (TC≤25°C)
PC
27
W
65
Junction Temperature
Storage Temperature
TJ
150
°C
°C
TSTG
-65 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
2.08
UNIT
°C/W
TO-220/TO-263
Thermal Resistance, Junction to Case TO-220F/TO-220F1
TO-3P
θJC
4.63
1.92
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
VCE=400V
5
100
1
mA
μA
mA
mA
V
Collect Cutoff Current (VBE=0)
ICES
VCE=250V, TC=150°C
VCE=250V
Emitter Cut-off Current (IC=0)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
IEBO
VBE=6V
1
VCE(SAT)* IC=5A, IB=0.5A
VBE(SAT)* IC=5A, IB=0.5A
1
1.2
240
V
hFE
fT
VCE=10V, IC=500mA
70
10
Transition Frequency
IC=500mA, VCE=10V
IC=5A, IB=0.5A
MHz
μs
Turn-off Time
tOFF
Is/b
0.75
Second Breakdown Collector Current
Note: Pulse duration=300μs, duty cycle 1.5%.
VCE=40V, t=10ms
4
A
CLASSIFICATION OF hFE
RANK
A
B
RANGE
70 ~ 120
110 ~ 240
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R203-021.F
www.unisonic.com.tw
BU406
NPN PLANAR TRANSISTOR
TYPICAL CHARACTERISTICS
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector Output Capacitance
f = 1MHz
1000
100
10
10000
1000
IC = 10IB
VBE(SAT)
100
10
VCE(SAT)
1
1
10
100
0
10
100
1000
10000
Collector Current, IC (mA)
Collector-Base Voltage, VCB (V)
Safe Operating Area
Power Derating
80
70
60
50
40
IC Max. (Pulsed)
10
1
IC Max. (Continuous)
TO-220
30
20
10
0
0.1
1
10
100
0
25 50 75
125 150 175
100
200
Collector-Base Voltage, VCE (V)
Case Temperature, TC (°C)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R203-021.F
www.unisonic.com.tw
BU406
NPN PLANAR TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R203-021.F
www.unisonic.com.tw
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