BU407-X-TA3-T [UTC]
NPN EXPITAXIAL PLANAR TRANSISTOR; NPN外延平面晶体管
| 型号： | BU407-X-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN EXPITAXIAL PLANAR TRANSISTOR |
| 文件： | 总3页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
BU407
NPN SILICON TRANSISTOR
NPN EXPITAXIAL PLANAR
TRANSISTOR
DESCRIPTION
The UTC BU407 is a NPN epitaxial planar transistor,
designed for use in TV Horizontal output and switching
applications.
1
TO-220
FEATURES
* High breakdown voltage
Lead-free:
BU407L
Halogen-free: BU407G
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-220
Packing
Tube
Normal
BU407-x-TA3-T
Lead Free Plating
BU407L-x-TA3-T
Halogen Free
BU407G-x-TA3-T
1
2
3
B
C
E
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 3
QW-R203-020.B
BU407
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
330
150
V
6
V
7
A
Base Current
IB
4
60
A
Collector Dissipation (Ta =25°С)
Junction Temperature
Storage Temperature
PC
W
°С
°С
TJ
150
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
MIN
TYP
MAX
70
UNIT
°С/W
°С/W
Junction to Ambient
Junction to Case
θJC
2.08
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
BVCEO
VCE(SAT)
VBE(SAT)
ICES
TEST CONDITIONS
IC =100 mA, IB = 0
MIN TYP MAX UNIT
Collector Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
150
V
V
1
1.2
5
IC = 5 A, IB = 0.5 A
V
Collect Cutoff Current’
VCE =400 V
mA
mA
Emitter Cutoff Current
IEBO
VBE = 6 V, IC = 0
1
hFE1
IC = 500 mA, VCE = 5 V
IC = 2 A, VCE = 5 V
25
35
10
10
DC Current Gain
hFE2
200
hFE3
IC = 5 A, VCE = 5 V
Current Gain Bandwidth Product
fT
IC= 500 mA, VCE = 10 V, f =1 MHz
MHZ
CLASSIFICATION OF hFE2
RANK
B
C
D
RANGE
35-85
75-125
115-200
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R203-020.B
www.unisonic.com.tw
BU407
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R203-020.B
www.unisonic.com.tw
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