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BU931ZL-TA3-T [UTC]

Power Bipolar Transistor;
BU931ZL-TA3-T
型号： BU931ZL-TA3-T
厂家： Unisonic Technologies    Unisonic Technologies
描述：

Power Bipolar Transistor
文件： 总3页 (文件大小：113K)
中文：  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
BU931Z  
NPN SILICON TRANSISTOR  
NPN POWER DARLINGTON  
FEATURES  
* High Operating Junction Temperature  
* High Voltage Ignition Coil Driver  
* Very Rugged Bipolar Technology  
INTERNAL SCHEMATIC DIAGRAM  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Lead Free  
Halogen Free  
BU931ZG-TA3-T  
BU931ZG-T3P-T  
1
B
B
2
C
C
3
E
E
BU931ZL-TA3-T  
BU931ZL-T3P-T  
TO-220  
TO-3P  
Tube  
Tube  
www.unisonic.com.tw  
Copyright © 2013 Unisonic Technologies Co., Ltd  
1 of 3  
QW-R214-015.F  
BU931Z  
NPN SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATINGS (TA=25°C)  
PARAMETER  
SYMBOL  
BVCEO  
BVEBO  
IC  
RATINGS  
UNIT  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Peak Current  
Base Current  
350  
5
V
10  
A
ICM  
15  
A
IB  
1
5
A
Base Peak Current  
IBM  
A
TO-220  
TO-3P  
120  
Total Dissipation (TC= 25 °C)  
PD  
W
125  
Junction Temperature  
Storage Temperature  
TJ  
+175  
-65 ~ +175  
°C  
°C  
TSTG  
ELECTRICAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VCE = 250V  
MIN TYP MAX UNIT  
Collector Cut-off Current  
Emitter Cut-off Current  
Clamping voltage  
ICEO  
IEBO  
VCL  
100  
20  
μA  
mA  
V
VEB = 5V  
IC = 100mA  
400  
300  
VCE(SAT)1 IC = 7 A, IB = 70 mA  
VCE(SAT)2 IC = 8 A, IB = 100 mA  
VBE(SAT)1 IC = 7 A, IB = 70 mA  
VBE(SAT)2 IC = 8 A, IB = 100 mA  
1.6  
1.8  
2.2  
2.4  
V
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
V
V
V
DC Current Gain  
hFE  
VF  
VCE = 10 V, IC = 5 A  
IF = 8 A  
Diode Forward Voltage  
2.5  
V
V
CC = 12 V, Vclamp = 300 V  
L = 7 mH, IC = 7 A, IB = 70 mA  
BE = 0, RBE = 47Ω  
tS  
tF  
15  
μs  
Inductive Load Storage Time / Fall Time  
0.5  
μs  
V
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R214-015.F  
www.unisonic.com.tw  
BU931Z  
NPN SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R214-015.F  
www.unisonic.com.tw  

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