BU941G-TQ2-R [UTC]
Power Bipolar Transistor;
| 型号： | BU941G-TQ2-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Bipolar Transistor |
| 文件： | 总5页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
BU941
NPN SILICON TRANSISTOR
NPN POWER DARLINGTON
HIGH VOLTAGE IGNITION
COIL DRIVER
FEATURES
* NPN Darlington
* Integrated antiparallel collector-emitter diode
APPLICATIONS
* High ruggedness electric ignitions
INTERNAL SCHEMATIC DIAGRAM
C
(2)
B (1)
(3)
E
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
BU941G-T3P-T
BU941G-TA3-T
BU941G-TQ2-T
BU941G-TQ2-R
1
B
B
B
B
2
C
C
C
C
3
E
E
E
E
BU941L-T3P-T
BU941L-TA3-T
BU941L-TQ2-T
BU941L-TQ2-R
TO-3P
TO-220
TO-263
TO-263
Tube
Tube
Tube
Tape Reel
Note: Pin assignment: E: Emitter
B: Base
C: Collector
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 5
QW-R203-025.D
BU941
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VCES
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
500
400
V
5
V
15
A
Collector Peak Current
Base Current
ICM
30
A
IB
1
5
A
Base Peak Current
IBM
W
W
W
W
C
C
TO-3P
TO-220
TO-263
155
Total Power Dissipation (Tc=25C)
PD
150
65
Junction Temperature
Storage Temperature
TJ
+175
-65 ~ +175
TSTG
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Tc=25C, unless otherwise specified)
PARAMETER
SYMBOL
VCEO(SUS)
TEST CONDITIONS
IC=1mA, VCLAMP=400V, L=10mH
(see Fig. 1)
MIN TYP
400
MAX UNIT
V
Collector-Emitter Sustaining
Voltage
*
V
V
V
V
CE=500V, VBE=0
CE=500V, VBE=0, TJ=125C
CE=450V, IB=0
100
0.5
100
0.5
20
μA
mA
μA
mA
mA
Collector Cut-Off Current
ICES
Collector Cut-Off Current
Emitter Cut-off Current
ICEO
IEBO
CE=450V, IB=0, TJ=125C
VEB=5V, IC=0
IC=8A, IB=100mA
IC=10A, IB=250mA
IC=12A, IB=300mA
IC=8A, IB=100mA
IC=10A, IB=250mA
IC=12A, IB=300mA
VCE=10V, IC=5A
IF=10A
1.6
1.8
2
Collector-Emitter Saturation
Voltage
VCE(SAT)
*
V
V
2.2
2.5
2.7
Base-Emitter Saturation Voltage
VBE(SAT)*
DC Current Gain
hFE*
VF
300
10
Diode Forward Voltage
2.5
V
A
VCC=24V, VCLAMP=400V, L=7mH
Functional Test
(see Functional Test Circuit)
VCC=12V, VCLAMP=300V, VBE=0,
Fall Time
tF
tS
0.5
15
μs
RBE=47Ω, L=7mH, IC=7A, IB=70mA
Storage Time
(see Fig.2)
* Pulsed: Pulse duration=300μs, duty cycle 1.5%
UNISNIC TECHNOLOGIES CO., LTD
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BU941
NPN SILICON TRANSISTOR
FUNCTION TEST CIRCUIT
UNISONIC TECHNOLOGIES CO., LTD
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QW-R203-025.D
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BU941
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
DC Current Gain
DC Current Gain
VCE=10V
8
6
8
6
VCE=2V
4
4
2
2
103
103
8
8
6
6
125℃
125℃
4
4
2
2
-40℃
102
8
-40℃
102
Tc=25℃
8
6
6
Tc=25℃
4
2
4
2
101
101
10-1
8
8
2
4
6
2
6
4
8
2
4
6
8
2
4
6
10-1
1
1
Collector Current, IC(A)
Collector Current, IC (A)
Collctor-Emitter Saturation Voltage
hFE=100
Collector-Emitter Saturation Voltage
4.0
1.4
1.2
1
3.5
2.5
-40℃
0.8
0.6
0.4
0.2
Tc=25℃
125℃
10A
8
6
4
2
1.5
0.5
1
0
12
2
8
10
4
6
1
100
200
0
50
150
Base Current, IB (mA)
Collector Current, Ic (mA)
Switching Time
Base-Emitter Saturation Voltage
hFE=100
Vclamp=300V, VCC=12V,
hFE=100, RBE=47Ω,
L=7mH, Tc=25℃
2.4
2.2
2
ts
10
1
1.8
1.6
-40℃
Tc=25℃
125℃
1.4
1.2
tf
10-1
0
12
12
1
2
8
1
2
4
6
8 10
4
6
10
Collector Current, IC(A)
Collector Current, IC(A)
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BU941
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Safe Operating Area
PULSE OPERATION *
Ic MAX PULSED
4
2
10μs
1018
Ic MAX
CONT
100
μs
6
4
2
1008
1ms
6
4
10ms
2
10-1
8
6
4
* For single non
repelitive pulse
D.C.
2
10-2
2
2
8
102
2
4
6 8
4
6
8
101
4
6
100
Collector-Emitter Voltage, VCE (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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