C6084L-TA3-T [UTC]
SWITCHING REGULATOR APPLICATIONS; 开关稳压器的应用
| 型号： | C6084L-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | SWITCHING REGULATOR APPLICATIONS |
| 文件： | 总4页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
C6084
NPN SILICON TRANSISTOR
SWITCHING REGULATOR
APPLICATIONS
1
TO-220
FEATURES
* High Speed.
* High Breakdown Voltage (VCBO=1500V).
* High Reliability.
1
TO-220F
1
TO-126
ORDERING INFORMATION
Ordering Number
Pin Description
Packing
Package
Lead Free
Halogen Free
1
B
B
B
2
C
C
C
3
E
E
E
C6084L-TA3-T
C6084L-TF3-T
C6084L-T60-K
C6084G-TA3-T
C6084G-TF3-T
C6084G-T60-K
TO-220
TO-220F
TO-126
Tube
Tube
Bulk
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., LTD
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NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25℃)
PARAMETER
SYMBOL
VCBO
RATINGS
UNIT
KV
TO-220
TO-126
1.5
Collector-Base Voltage
1.4
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
800
V
V
5
TO-220
TO-126
TO-220
TO-126
TO-220
TO-126
5
IC
A
A
3
12
Collector Current
ICP
PC
6
1.75
1.25
150
W
W
Collector Dissipation
Junction Temperature
Storage Temperature
TJ
°C
°C
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25℃)
PARAMETER
SYMBOL
ICBO
TEST CONDITIONS
VCB=800V, IE=0A
VCE=1500V, RBE=0Ω
MIN TYP MAX UNIT
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Collector-Emitter
10
µA
ICES
1.0 mA
V
VCEO(SUS) IC=10mA, IB=0A
800
IEBO
VBE=4V, IC=0A
1.0 mA
TO-220
IC=2.7A, IB=0.54A
IC=1.4A, IB=0.27A
IC=2.7A, IB=0.54A
3
V
3
VCE(SAT)
Saturation Voltage
Base-Emitter Saturation
Voltage
TO-126
TO-220
1.5
V
VBE(SAT)
hFE1
TO-126
IC=1.4A, IB=0.27A
VCE=5V, IC=0.5A
1.5
TO-220/TO-126
TO-220
10
5
VCE=5V, IC=3A
7
7
DC Current Gain
Fall Time
hFE2
VCE=5V, IC=1.8A
TO-126
5
TF
IC=1.8A, IB1=0.36A, IB2=-0.72A
0.2
µS
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R203-039.C
www.unisonic.com.tw
C6084
NPN SILICON TRANSISTOR
TEST CIRCUIT
PW=20µs
D.C.≤1%
IB1
IB2
OUTPUT
RB
INPUT
RL=111Ω
VR
50Ω
100µF
470µF
VBE=-5V
VCC=200V
UNISONIC TECHNOLOGIES CO., LTD
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C6084
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Current VS. BVCES
Collector Current VS. BVCBO
1.4
1.2
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0
0.8
0.6
0.4
0.2
0
0.8 1.0 1.2 1.4 1.6 1.8
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
0.2 0.4 0.6
Collector-Emitter Breakdown Voltage ,BVCES (kV)
Collector-Base Breakdown Voltage ,BVCBO (kV)
Emitter Current VS. BVEBO
1.8
Collector Current VS. VCEO(SUS)
14
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
12
10
8
6
4
2
0
20
0.8 1.0
1.2 1.4 1.6 1.8
0
5
10
15
0
0.2 0.4 0.6
Emitter-Base Breakdown Voltage ,BVEBO (V)
Collector-Emitter Voltage ,VCEO(SUS) (kV)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R203-039.C
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