D882SSE [UTC]

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D882SSE
型号: D882SSE
厂家: Unisonic Technologies    Unisonic Technologies
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晶体 晶体管
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UTC D882SS  
NPN EPITAXIAL SILICON TRANSISTOR  
MEDIUM POWER LOW VOLTAGE  
TRANSISTOR  
FEATURES  
*High current output up to 3A  
*Low saturation voltage  
*Complement to B772SS  
2
1
APPLICATIONS  
* Audio power amplifier  
* DC-DC convertor  
3
* Voltage regulator  
MARKING  
D82  
SOT-23  
1: EMITTER 2: BASE 3: COLLECTOR  
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )  
PARAMETERS  
Collector-base voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
Pc  
RATING  
UNIT  
V
V
40  
30  
5
Collector-emitter voltage  
Emitter-base voltage  
V
Collector dissipation( Tc=25°C)  
Collector dissipation( Ta=25°C)  
Collector current(DC)  
Collector current(PULSE)  
Base current  
10  
1
3
7
0.6  
W
W
A
A
A
Pc  
Ic  
Ic  
IB  
Junction Temperature  
Storage Temperature  
Tj  
TSTG  
150  
-55 ~ +150  
°C  
°C  
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VCB=30V,IE=0  
MIN TYP MAX UNIT  
Collector cut-off current  
Emitter cut-off current  
DC current gain(note 1)  
ICBO  
IEBO  
hFE1  
hFE2  
1000  
1000  
nA  
nA  
VEB=3V,Ic=0  
VCE=2V,Ic=20mA  
VCE=2V,Ic=1A  
30  
100  
200  
150  
0.3  
1.0  
80  
400  
0.5  
2.0  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Current gain bandwidth product  
Output capacitance  
VCE(sat)  
VBE(sat)  
fT  
Ic=2A,IB=0.2A  
Ic=2A,IB=0.2A  
VCE=5V,Ic=0.1A  
VCB=10V,IE=0,f=1MHz  
V
V
MHz  
pF  
Cob  
45  
1
UTC  
UNISONIC TECHNOLOGIES CO. LTD  
QW-R206-018,A  
UTC D882SS  
NPN EPITAXIAL SILICON TRANSISTOR  
Note 1:Pulse test:PW<300µs,Duty Cycle<2%  
CLASSIFICATION OF hFE2  
RANK  
Q
P
E
RANGE  
100-200  
160-320  
200-400  
TYPICAL PARAMETERS PERFORMANCE  
Fig.2 Derating curve of safe  
Fig.1 Static characteristics  
Fig.3 Power Derating  
operating areas  
150  
100  
12  
8
1.6  
-IB=9mA  
-IB=8MA  
-IB=7mA  
1.2  
0.8  
-IB=6mA  
-IB=5mA  
S
/
b
l
i
m
D
i
t
i
e
d
s
s
i
p
-IB=4mA  
a
t
50  
0
i
o
4
0
n
-IB=3mA  
-IB=2mA  
-IB=1mA  
l
i
m
0.4  
0
i
t
e
d
0
4
8
12  
16  
20  
-50  
0
50  
100  
150  
200  
-50  
0
50  
100  
150  
200  
-Collector-Emitter voltage(V)  
Tc,Case Temperature(°C)  
Tc,Case Temperature(°C)  
Fig.4 Collector Output  
capacitance  
Fig.5 Current gain-  
bandwidth product  
Fig.6 Safe operating area  
3
3
1
Ic(max),Pulse  
10  
10  
10  
1
0
1
m
m
S
S
Ic(max),DC  
VCE=5V  
I
E=0  
f=1MHz  
2
2
0
10  
10  
10  
IB  
=8mA  
1
1
-1  
10  
10  
10  
0
0
-2  
10  
10  
10  
0
-1  
10  
-2  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
0
1
2
10  
10  
10  
10  
10  
10  
Collector-Emitter Voltage  
Ic,Collector current(A)  
-Collector-Base Voltage(v)  
Fig.7 DC current gain  
Fig.8 Saturation Voltage  
3
4
10  
10  
V
CE=-2V  
VBE(sat)  
3
10  
2
10  
2
10  
VCE(sat)  
1
10  
1
10  
0
0
10  
10  
0
10  
1
2
3
4
0
1
2
3
4
10  
10  
10  
10  
10  
10  
10  
10  
10  
-Ic,Collector current(mA)  
-Ic,Collector current(mA)  
2
UTC  
UNISONIC TECHNOLOGIES CO. LTD  
QW-R206-018,A  
UTC D882SS  
NPN EPITAXIAL SILICON TRANSISTOR  
3
UTC  
UNISONIC TECHNOLOGIES CO. LTD  
QW-R206-018,A  
UTC D882SS  
NPN EPITAXIAL SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
4
UTC  
UNISONIC TECHNOLOGIES CO. LTD  
QW-R206-018,A  

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