DTA113T [UTC]
PNP DIGITAL TRANSISTOR; PNP晶体管数字
| 型号： | DTA113T |
| 厂家： | 
Unisonic Technologies |
| 描述： | PNP DIGITAL TRANSISTOR |
| 文件： | 总3页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
DTA113T
PNP SILICON TRANSISTOR
PNP DIGITAL TRANSISTOR
(BUILT- IN BIAS RESISTORS)
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation
to allow positive input.
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
SOT-23
Lead Free
Halogen Free
1
2
3
DTA113TL-AE3-R
DTA113TG-AE3-R
E
B
C
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-091.C
DTA113T
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-50
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-50
V
-6
V
-100
mA
mA
mW
°C
Peak Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
ICM
-200
PC
150
TJ
150
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
-50
TYP MAX UNIT
V
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cut-off Current
BVCEO IC=-100μA, RBE=∞
VCE(SAT) IC=-10mA, IB=-0.5mA
-0.3
-0.1
V
ICBO
hFE
RIN
fT
VCB=-50V, IE=0
μA
DC Current Gain
VCE=-5V, IC=-1mA
100
0.7
Input Resistance
1.0
1.3
kΩ
Current Gain Bandwidth Product
VCE=-6V, IE=10mA
150
MHz
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R206-091.C
www.unisonic.com.tw
DTA113T
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R206-091.C
www.unisonic.com.tw
相关型号：
DTA113TAAC2
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ATR, 3 PIN
ROHM
DTA113TCAT116
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOLD, SST, 3 PIN
ROHM
DTA113TCAT117
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOLD, SST, 3 PIN
ROHM
DTA113TCAT216
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
ROHM
DTA113TETL
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOLD, EM3, 3 PIN
ROHM
DTA113TETR
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOLD, EM3, 3 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明