DTA114TL-AL3-R [UTC]
DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS); 数字晶体管（内置偏置电阻）
| 型号： | DTA114TL-AL3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS) |
| 文件： | 总3页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
DTA114T
PNP SILICON TRANSISTOR
DIGITAL TRANSISTORS
(BUILT- IN BIAS RESISTORS)
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow positive input.
EQUIVALENT CIRCUIT
*Pb-free plating product number:DTA114TL
ORDERING INFORMATION
Order Number
Package
Pin Assignment
Packing
Normal
Lead Free Plating
DTA114TL-AE3-R
DTA114TL-AL3-R
DTA114TL-AN3-R
1
E
E
E
2
B
B
B
3
C
C
C
DTA114T-AE3-R
DTA114T-AL3-R
DTA114T-AN3-R
SOT-23
SOT-323
SOT-523
Tape Reel
Tape Reel
Tape Reel
DTA114TL-AE3-R
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) R: Tape Reel
(2) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523
(3) L: Lead Free Plating, Blank: Pb/Sn
MARKING
ofwww.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1of 3
QW-R206-061,B
DTA114T
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
-50
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-50
V
-5
V
-100
200
mA
mW
mW
℃
SOT-23
Collector Power Dissipation
PC
SOT-323/SOT-523
150
Junction Temperature
Storage Temperature
TJ
+150
-55~+150
℃
TSTG
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cutoff Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVCBO IC=-50μA
-50
-50
-5
V
V
BVCEO IC=-1mA
BVEBO IE=-50μA
V
VCE(SAT) IC=-10mA, IB=-1mA
-0.3
-0.5
-0.5
V
ICBO
IEBO
hFE
R1
VCB=-50V
μA
μA
Emitter Cutoff Current
VEB=-4V
DC Current Gain
VCE=-5V, IC=-1mA
100 250 600
Input Resistance
7
10
13
kΩ
Transition Frequency
fT
VCE=-10V, IE=5mA, f=100MHz*
250
MHz
* Transition frequency of the device
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
www.unisonic.com.tw
QW-R206-061,B
DTA114T
■ TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
www.unisonic.com.tw
QW-R206-061,B
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