DTA124EL-AE3-R [UTC]
PNP DIGITAL TRANSISTOR (BUILT-IN RESISTORS); PNP数字晶体管(内置电阻)![DTA124EL-AE3-R](http://pdffile.icpdf.com/pdf1/p00113/img/icpdf/DTA124E-AE3-R_612853_icpdf.jpg)
型号: | DTA124EL-AE3-R |
厂家: | ![]() |
描述: | PNP DIGITAL TRANSISTOR (BUILT-IN RESISTORS) |
文件: | 总3页 (文件大小:112K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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UNISONIC TECHNOLOGIES CO.,
DTA124E
PNP EPITAXIAL SILICON TRANSISTOR
PNP DIGITAL TRANSISTOR
(BUILT-IN RESISTORS)
ꢀ FEATURES
*Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors (see the
equivalent circuit).
2
1
*The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input. They also have
the advantage of almost completely eliminating parasitic
effects.
3
*Only the on / off conditions need to be set for operation,
making device design easy.
SOT-23
ꢀ EQUIVALENT CIRCUIT ꢀ MARKING
OUT
R1
IN
*Pb-free plating product number:DTA124EL
R2
AC4
ꢀ
PIN CONFIGURATION
GND(+)
PIN NO.
PIN NAME
GND
IN
OUT
GND(+)
1
2
3
IN
OUT
ꢀ ORDERING INFORMATION
Order Number
Package
Packing
Normal
Lead free
DTA124E-AE3-R DTA124EL-AE3-R SOT-23
Tape Reel
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,
1
QW-R206-044,B
DTA124E
PNP EPITAXIAL SILICON TRANSISTOR
ꢀ ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
Supply Voltage
SYMBOL
RATINGS
-50
UNIT
V
VCC
VIN
IC
Input Voltage
-40 ~ +10
-100
V
Output Current
mA
IO
-30
Power Dissipation
PD
TJ
200
mW
℃
Junction Temperature
Storage Temperature
150
℃
TSTG
-40 ~ +150
ꢀ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)
PARAMETER
Input Voltage
SYMBOL
VI(off)
VI(ON)
VO(ON)
II
TEST CONDITIONS
VCC= -5V, IOUT= -100μA
MIN
TYP
MAX
-0.5
UNIT
V
VOUT= -0.2V, IOUT= -5mA
IOUT/IIN= -10mA / -0.5 mA
VIN= -5V
-3
Output Voltage
Input Current
-0.1
-0.3
-0.36
-0.5
V
mA
μA
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
IO(off)
GI
VCC= -50V , VIN=0V
VOUT= -5V, IOUT= -5mA
56
15.4
0.8
kΩ
R1
22
1
28.6
1.2
R2/R1
fT
VCE= -10 V, IE= 5mA, f=100MHz *
250
MHz
*Transition frequency of the device
UNISONIC TECHNOLOGIES CO., LTD
2
www.unisonic.com.tw
QW-R206-044,B
DTA124E
■ TYPICAL CHARACTERICS
PNP EPITAXIAL SILICON TRANSISTOR
Fig.1 Input voltagevs.output current
(ON characterristics)
Fig.2 Output current vs Input voltage
.(OFF characterristics)
-10m
-100
-50
Vcc=-5V
-5m
Vo=-0.3V
-20
-2m
Ta=100℃
25℃
-1m
-500μ
-40 ℃
-10
-5
Ta= -40℃
-200μ
-100μ
-50μ
25℃
100℃
-2
-1
-20μ
-10μ
-5μ
-500m
-200m
-2μ
-1μ
-100m
-100μ
-200μ-500μ-1m -2m
-5m
-10m-20m
-50m -100m
-0.5 -1.0
-1.5
-2.0 -2.5
-3.0
0
Output Current :Io(A)
Fig.3 DC currentgain vs.output current
Vo=-5V
InputVoltage:VI(OFF)
V
Fig.4Output voltage vs.output current
lo/lI=20
1k
-1
-500m
500
Ta=100℃
25℃
Ta=100℃
25℃
-40 ℃
-200m
-100m
200
-40℃
100
50
-50m
-20m
-10m
20
10
-5m
5
-2m
-1m
2
1
-100μ
- 100μ -200μ -500μ-1m -2m
-5m
-10m -20m -50m -100m
-200μ-500μ-1m -2m
-5m
-10m -20m
-50m -100m
Output Current :Io(A)
Output Current :Io(A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3
www.unisonic.com.tw
QW-R206-044,B
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