DTA143EL-T92-B [UTC]
PNP DIGITAL TRANSISTOR (BULT-IN RESISTORS); 数字PNP晶体管(比尔式电阻器)型号: | DTA143EL-T92-B |
厂家: | Unisonic Technologies |
描述: | PNP DIGITAL TRANSISTOR (BULT-IN RESISTORS) |
文件: | 总4页 (文件大小:180K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO.,
DTA143E
PNP EPITAXIAL SILICON TRANSISTOR
PNP DIGITAL TRANSISTOR (BULT-IN
RESISTORS)
ꢀ FEATURES
* Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors (see the
equivalent circuit).
* The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input
They also have the advantage of almost completely
eliminating parasitic effects.
1
* Only the on / off conditions need to be set for operation,
making device design easy.
TO-92
ꢀ EQUIVALENT CIRCUIT ꢀ MARKING
*Pb-free plating product number:DTA143EL
OUT
R1
IN
ꢀ PIN CONFIGURATION
AE3
R2
PIN NO.
PIN NAME
GND
GND (+)
1
2
3
OUT
IN
IN
OUT
GND (+)
ꢀ ORDERING INFORMATION
Order Number
Package
Packing
Normal
Lead free
DTA143E-T92-B DTA143EL-T92-B
DTA143E-T92-K DTA143EL-T92-K
TO-92
TO-92
Tape Box
Bulk
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,
1
Ver.A
QW-R201-080.A
DTA143E
PNP EPITAXIAL SILICON TRANSISTOR
ꢀ ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
Supply Voltage
SYMBOL
VCC
RATINGS
-50
UNIT
V
Input Voltage
VIN
-30~+10
-100
V
Io
Output Current
mA
IC(max)
PD
-100
Power Dissipation
300
mW
℃
Junction Temperature
Storage Temperature
TJ
150
℃
TSTG
-40 ~ +150
ꢀ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)
PARAMETER
Input Voltage
SYMBOL
VI(off)
VI(ON)
VO(ON)
II
TEST CONDITIONS
VCC= -5V, IO=-100μA
MIN
TYP
MAX
-0.5
UNIT
V
VO= -0.3V, IO= -20mA
IO/II= -10mA / -0.5 mA
VI= -5V
-3
Output Voltage
Input Current
-0.1
-0.3
-1.8
-0.5
V
mA
μA
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
IO(off)
GI
VCC= -50V , VI=0V
VO= -5V, IO= -10mA
20
3.29
0.8
kΩ
R1
4.7
1
6.11
1.2
R2/R1
fT
VCE= -10 V, IE= 5mA, f=100MHz *
250
MHz
*Transition frequency of the device
UNISONIC TECHNOLOGIES CO., LTD
2
www.unisonic.com.tw
Ver.A
QW-R201-080.A
DTA143E
PNP EPITAXIAL SILICON TRANSISTOR
■ TYPICAL CHARACTERICS
Input voltage vs.output current
(ON characterristics)
Output current vs Input voltage
(OFF characterristics)
-10m
-5m
-100
Vcc= -5V
Vo= -0.3V
-50
Ta=100℃
25℃
-40℃
-2m
-20
-10
-5
-1m
-500μ
Ta=-40℃
25℃
-200μ
-100μ
100℃
-2
-1
-50μ
-20μ
-10μ
-5μ
-500m
-200m
-100m
-2μ
-1μ
-100μ
-200μ -500 μ-1m -2m
-5m
-50m -100 m
-10m -20m
0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
Output Current, Io (A)
INPUT VOLTAGE, Vi(off) (V)
Output voltage vs. output current
DC current gain vs.output current
-1
1K
Io/II=20
Vo= -5V
Ta=100℃
25℃
-500m
500
Ta=100℃
25℃
-40℃
-200 m
200
100
50
-40℃
-
100m
-50m
-20m
20
10
5
-10m
-5m
-2m
-1m
2
1
-100μ
-200μ -500μ
-2m
-20m -50m -100m
-5m -10m
-100 μ
-1m
-200 μ -500μ
-1m
-2m
-5m -10m -20m -50m -100m
Output Current, Io (A)
Output Current, Io (A)
UNISONIC TECHNOLOGIES CO., LTD
3
www.unisonic.com.tw
Ver.A
QW-R201-080.A
DTA143E
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4
www.unisonic.com.tw
Ver.A
QW-R201-080.A
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