DTA143EL-T92-B [UTC]

PNP DIGITAL TRANSISTOR (BULT-IN RESISTORS); 数字PNP晶体管(比尔式电阻器)
DTA143EL-T92-B
型号: DTA143EL-T92-B
厂家: Unisonic Technologies    Unisonic Technologies
描述:

PNP DIGITAL TRANSISTOR (BULT-IN RESISTORS)
数字PNP晶体管(比尔式电阻器)

晶体 电阻器 晶体管
文件: 总4页 (文件大小:180K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO.,  
DTA143E  
PNP EPITAXIAL SILICON TRANSISTOR  
PNP DIGITAL TRANSISTOR (BULT-IN  
RESISTORS)  
FEATURES  
* Built-in bias resistors enable the configuration of an inverter  
circuit without connecting external input resistors (see the  
equivalent circuit).  
* The bias resistors consist of thin-film resistors with  
complete isolation to allow positive biasing of the input  
They also have the advantage of almost completely  
eliminating parasitic effects.  
1
* Only the on / off conditions need to be set for operation,  
making device design easy.  
TO-92  
EQUIVALENT CIRCUIT MARKING  
*Pb-free plating product number:DTA143EL  
OUT  
R1  
IN  
PIN CONFIGURATION  
AE3  
R2  
PIN NO.  
PIN NAME  
GND  
GND (+)  
1
2
3
OUT  
IN  
IN  
OUT  
GND (+)  
ORDERING INFORMATION  
Order Number  
Package  
Packing  
Normal  
Lead free  
DTA143E-T92-B DTA143EL-T92-B  
DTA143E-T92-K DTA143EL-T92-K  
TO-92  
TO-92  
Tape Box  
Bulk  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co.,  
1
Ver.A  
QW-R201-080.A  
DTA143E  
PNP EPITAXIAL SILICON TRANSISTOR  
ABSOLUATE MAXIUM RATINGS (Ta = 25)  
PARAMETER  
Supply Voltage  
SYMBOL  
VCC  
RATINGS  
-50  
UNIT  
V
Input Voltage  
VIN  
-30~+10  
-100  
V
Io  
Output Current  
mA  
IC(max)  
PD  
-100  
Power Dissipation  
300  
mW  
Junction Temperature  
Storage Temperature  
TJ  
150  
TSTG  
-40 ~ +150  
ELECTRICAL CHARACTERISTICS (Ta= 25, unless otherwise specified.)  
PARAMETER  
Input Voltage  
SYMBOL  
VI(off)  
VI(ON)  
VO(ON)  
II  
TEST CONDITIONS  
VCC= -5V, IO=-100μA  
MIN  
TYP  
MAX  
-0.5  
UNIT  
V
VO= -0.3V, IO= -20mA  
IO/II= -10mA / -0.5 mA  
VI= -5V  
-3  
Output Voltage  
Input Current  
-0.1  
-0.3  
-1.8  
-0.5  
V
mA  
μA  
Output Current  
DC Current Gain  
Input Resistance  
Resistance Ratio  
Transition Frequency  
IO(off)  
GI  
VCC= -50V , VI=0V  
VO= -5V, IO= -10mA  
20  
3.29  
0.8  
kΩ  
R1  
4.7  
1
6.11  
1.2  
R2/R1  
fT  
VCE= -10 V, IE= 5mA, f=100MHz *  
250  
MHz  
*Transition frequency of the device  
UNISONIC TECHNOLOGIES CO., LTD  
2
www.unisonic.com.tw  
Ver.A  
QW-R201-080.A  
DTA143E  
PNP EPITAXIAL SILICON TRANSISTOR  
TYPICAL CHARACTERICS  
Input voltage vs.output current  
(ON characterristics)  
Output current vs Input voltage  
(OFF characterristics)  
-10m  
-5m  
-100  
Vcc= -5V  
Vo= -0.3V  
-50  
Ta=100℃  
25℃  
-40℃  
-2m  
-20  
-10  
-5  
-1m  
-500μ  
Ta=-40℃  
25℃  
-200μ  
-100μ  
100℃  
-2  
-1  
-50μ  
-20μ  
-10μ  
-5μ  
-500m  
-200m  
-100m  
-2μ  
-1μ  
-100μ  
-200μ -500 μ-1m -2m  
-5m  
-50m -100 m  
-10m -20m  
0
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
Output Current, Io (A)  
INPUT VOLTAGE, Vi(off) (V)  
Output voltage vs. output current  
DC current gain vs.output current  
-1  
1K  
Io/II=20  
Vo= -5V  
Ta=100℃  
25℃  
-500m  
500  
Ta=100℃  
25℃  
-40℃  
-200 m  
200  
100  
50  
-40℃  
-
100m  
-50m  
-20m  
20  
10  
5
-10m  
-5m  
-2m  
-1m  
2
1
-100μ  
-200μ -500μ  
-2m  
-20m -50m -100m  
-5m -10m  
-100 μ  
-1m  
-200 μ -500μ  
-1m  
-2m  
-5m -10m -20m -50m -100m  
Output Current, Io (A)  
Output Current, Io (A)  
UNISONIC TECHNOLOGIES CO., LTD  
3
www.unisonic.com.tw  
Ver.A  
QW-R201-080.A  
DTA143E  
PNP EPITAXIAL SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4
www.unisonic.com.tw  
Ver.A  
QW-R201-080.A  

相关型号:

DTA143EL-T92-K

PNP DIGITAL TRANSISTOR (BULT-IN RESISTORS)
UTC

DTA143EL-T92-R

DIGITAL TRANSISTORS
UTC

DTA143ELA

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP
ETC

DTA143ELATL2

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, FTL, 3 PIN
ROHM

DTA143ELATL3

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, FTL, 3 PIN
ROHM

DTA143ELATL4

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, FTL, 3 PIN
ROHM

DTA143ELTL3

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon, FTL, 3 PIN
ROHM

DTA143EM

DTA/DTC SERIES
ROHM

DTA143EM

PNP Small Signal Transistor
TSC

DTA143EM

Small Signal Bipolar Transistor
WEITRON

DTA143EM3

Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k
ONSEMI

DTA143EM3T5G

Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
ONSEMI