DTA144TL-AL3-R [UTC]
Small Signal Bipolar Transistor,;
| 型号： | DTA144TL-AL3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor, |
| 文件： | 总3页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
DTA144T
PNP SILICON TRANSISITOR
PNP DIGITAL TRANSISTOR
(BUILT-IN RESISTOR)
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation
to allow positive input.
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
B
B
B
2
E
E
E
3
C
C
C
DTA144TL-AE3-R
DTA144TL-AL3-R
DTA144TL-AN3-R
DTA144TG-AE3-R
DTA144TG-AL3-R
DTA144TG-AN3-R
SOT-23
SOT-323
SOT-523
Tape Reel
Tape Reel
Tape Reel
Note: Pin Assignment: B: Base E: Emitter
C: Collector
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-065.E
DTA144T
PNP SILICON TRANSISITOR
ABSOLUTE MAXIMUM RATINGS (TA =25C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-50
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-50
V
-5
V
-100
mA
mW
°С
°С
Collector Power Dissipation
Junction Temperature
Storage Temperature
PC
200
TJ
+150
-55 ~ +150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA =25C, unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC=-50μA
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
-50
-50
-5
V
V
IC=-1mA
IE=-50μA
VCB=-50V
VEB=-4V
V
-0.5
-0.5
-0.3
600
μA
μA
V
Emitter Cutoff Current
IEBO
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
VCE(SAT) IC =-5mA, IB= -0.5mA
hFE
fT
VCE =-5V, IC= -1mA
100
250
250
47
Transition Frequency (Note)
Input Resistance
VCE=-10V, IE=5mA, f=100MHz
MHz
R1
32.9
61.1
kΩ
Note: Transition frequency of the device.
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R206-065.E
www.unisonic.com.tw
DTA144T
PNP SILICON TRANSISITOR
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R206-065.E
www.unisonic.com.tw
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