DTA144TL-AL3-R [UTC]

Small Signal Bipolar Transistor,;
DTA144TL-AL3-R
型号: DTA144TL-AL3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Small Signal Bipolar Transistor,

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中文:  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
DTA144T  
PNP SILICON TRANSISITOR  
PNP DIGITAL TRANSISTOR  
(BUILT-IN RESISTOR)  
FEATURES  
* Built-in bias resistors that implies easy ON/OFF applications.  
* The bias resistors are thin-film resistors with complete isolation  
to allow positive input.  
EQUIVALENT CIRCUIT  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Lead Free  
Halogen Free  
1
B
B
B
2
E
E
E
3
C
C
C
DTA144TL-AE3-R  
DTA144TL-AL3-R  
DTA144TL-AN3-R  
DTA144TG-AE3-R  
DTA144TG-AL3-R  
DTA144TG-AN3-R  
SOT-23  
SOT-323  
SOT-523  
Tape Reel  
Tape Reel  
Tape Reel  
Note: Pin Assignment: B: Base E: Emitter  
C: Collector  
MARKING  
www.unisonic.com.tw  
Copyright © 2014 Unisonic Technologies Co., Ltd  
1 of 3  
QW-R206-065.E  
DTA144T  
PNP SILICON TRANSISITOR  
ABSOLUTE MAXIMUM RATINGS (TA =25C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
-50  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
-50  
V
-5  
V
-100  
mA  
mW  
°С  
°С  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
PC  
200  
TJ  
+150  
-55 ~ +150  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (TA =25C, unless otherwise specified)  
PARAMETER  
SYMBOL  
BVCBO  
BVCEO  
BVEBO  
ICBO  
TEST CONDITIONS  
IC=-50μA  
MIN TYP MAX UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
-50  
-50  
-5  
V
V
IC=-1mA  
IE=-50μA  
VCB=-50V  
VEB=-4V  
V
-0.5  
-0.5  
-0.3  
600  
μA  
μA  
V
Emitter Cutoff Current  
IEBO  
Collector-Emitter Saturation Voltage  
DC Current Transfer Ratio  
VCE(SAT) IC =-5mA, IB= -0.5mA  
hFE  
fT  
VCE =-5V, IC= -1mA  
100  
250  
250  
47  
Transition Frequency (Note)  
Input Resistance  
VCE=-10V, IE=5mA, f=100MHz  
MHz  
R1  
32.9  
61.1  
kΩ  
Note: Transition frequency of the device.  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R206-065.E  
www.unisonic.com.tw  
DTA144T  
PNP SILICON TRANSISITOR  
TYPICAL CHARACTERISTICS  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all UTC products described or contained herein.  
UTC products are not designed for use in life support appliances, devices or systems where malfunction  
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in  
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to  
make changes to information published in this document, including without limitation specifications and  
product descriptions, at any time and without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R206-065.E  
www.unisonic.com.tw  

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