DTB114EG-AE3-R [UTC]

DIGITAL TRANSISTORS; 数字晶体管
DTB114EG-AE3-R
型号: DTB114EG-AE3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

DIGITAL TRANSISTORS
数字晶体管

晶体 数字晶体管
文件: 总3页 (文件大小:191K)
中文:  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
DTB114E  
PNP SILICON TRANSISTOR  
DIGITAL TRANSISTORS  
(BUILT-IN BIAS RESISTORS)  
„
FEATURES  
* Built-in bias resistors that implies easy ON/OFF applications.  
* The bias resistors are thin-film resistors with complete isolation  
to allow positive input.  
„ EQUIVALENT CIRCUIT  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Lead Free  
Halogen Free  
1
2
I
3
DTB114EL-AE3-R  
DTB114EL-AL3-R  
DTB114EG-AE3-R  
DTB114EG-AL3-R  
SOT-23  
SOT-323  
G
G
O
O
Tape Reel  
Tape Reel  
I
„ MARKING  
www.unisonic.com.tw  
Copyright © 2011 Unisonic Technologies Co., Ltd  
1 of 3  
QW-R206-042,D  
DTB114E  
PNP SILICON TRANSISTOR  
„ ABSOLUTE MAXIMUM RATINGS (TA = 25, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCC  
RATING  
-50  
UNIT  
V
Supply Voltage  
Input Voltage  
Output Current  
VIN  
IOUT  
-40~+10  
-500  
V
mA  
mW  
°C  
PD  
Power Dissipation  
200  
Junction Temperature  
Storage Temperature  
TJ  
150  
TSTG  
-55 ~ +150  
°C  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„ ELECTRICAL CHARACTERISTICS (TA= 25, unless otherwise specified.)  
PARAMETER  
Input Voltage  
SYMBOL  
VIN(OFF) VCC= -5V, IOUT= -100μA  
VIN(ON) VOUT= -0.3V, IOUT= -10mA  
VOUT(ON) IOUT/IIN= -50mA/-2.5 mA  
IIN VIN= -5V  
IOUT(OFF) VCC= -50V , VIN=0V  
TEST CONDITIONS  
MIN  
TYP  
-0.1  
MAX  
-0.5  
UNIT  
V
-3  
Output Voltage  
Input Current  
-0.3  
-0.88  
-0.5  
V
mA  
μA  
Output Current  
DC Current Gain  
Input Resistance  
Resistance Ratio  
Transition Frequency  
hFE  
R1  
VOUT= -5V, IOUT= -50mA  
56  
7
10  
1
13  
kΩ  
R2/R1  
fT  
0.8  
1.2  
VCE= -10 V, IE=5mA, f=100MHz(Note)  
200  
MHz  
Note: Transition frequency of the device  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
www.unisonic.com.tw  
QW-R206-042,D  
DTB114E  
TYPICAL CHARACTERISTICS  
PNP SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
www.unisonic.com.tw  
QW-R206-042,D  

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