DTB114E [UTC]
DIGITAL TRANSISTORS (BUILT-IN BIAS RESISTORS); 数字晶体管(内置偏置电阻)型号: | DTB114E |
厂家: | Unisonic Technologies |
描述: | DIGITAL TRANSISTORS (BUILT-IN BIAS RESISTORS) |
文件: | 总3页 (文件大小:101K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
DTB114E
PNP SILICON TRANSISTOR
DIGITAL TRANSISTORS
(BUILT-IN BIAS RESISTORS)
3
1
2
ꢀ
FEATURES
SOT-23
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation
to allow positive input.
3
1
2
SOT-323
ꢀ EQUIVALENT CIRCUIT
OUT
R1
IN
*Pb-free plating product number:DTB114EL
R2
GND(+)
OUT
IN
GND(+)
ꢀ ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Normal
Lead Free Plating
1
G
G
2
I
3
O
O
DTB114E-AE3-R
DTB114E-AL3-R
DTB114EL-AE3-R
DTB114EL-AL3-R
SOT-23
SOT-323
Tape Reel
Tape Reel
I
DTB114EL-AE3-R
(1)Packing Type
(1) R: Tape Reel
(2) AE3: SOT-23, AL3: SOT-323
(2)Package Type
(3)Lead Plating
(3) L: Lead Free Plating, Blank: Pb/Sn
ꢀ MARKING
BB4
www.unisonic.com.tw
1 of 3
Copyright © 2005 Unisonic Technologies Co., Ltd
QW-R206-042,B
DTB114E
ꢀ ABSOLUTE MAXIMUM RATINGS (Ta = 25
PNP SILICON TRANSISTOR
℃)
PARAMETER
Supply Voltage
SYMBOL
VCC
RATING
-50
UNIT
V
Input Voltage
VIN
IOUT
-40~+10
-500
V
Output Current
mA
mW
PD
Power Dissipation
200
Junction Temperature
Storage Temperature
TJ
150
°
°
C
C
TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)
PARAMETER
Input Voltage
SYMBOL
VIN(OFF)
TEST CONDITIONS
VCC= -5V, IOUT= -100
MIN
-3
TYP
-0.1
MAX
-0.5
UNIT
V
μ
A
VIN(ON) VOUT= -0.3V, IOUT= -10mA
OUT/IIN= - 0mA/- .5 mA
VIN= -5V
IOUT(OFF) VCC= -50V , VIN=0V
I
5
2
Output Voltage
VOUT(ON)
IIN
-0.3
-0.88
-0.5
V
Input Current
mA
µA
Output Current
VOUT= -5V, IOUT= -50mA
DC Current Gain
hFE
R1
56
7
Input Resistance
10
1
13
kΩ
Resistance Ratio
Transition Frequency
*Transition frequency of the device
R2/R1
0.8
1.2
VCE= -10 V, IE=5mA, f=100MHz*
fT
200
MHz
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
www.unisonic.com.tw
QW-R206-042,B
DTB114E
PNP SILICON TRANSISTOR
■
TYPICAL CHARACTERISTICS
Input Voltage vs. Output Current
(ON Characterristics)
Output Current vs. Input Voltage
(OFF Characterristics)
-10
-5
-100
Vcc= - 5V
VoUT= - 0.3V
-50
Ta=100℃
25℃
-40℃
-2
-1
-20
-0.5
-10
Ta=-40℃
-0.2
-0.1
25℃
-5
100℃
-0.05
-2
-1
-0.02
-0.01
-500m
-0.005
-200m
-100m
-0.002
-0.001
-0.5
-1
-2
-5
-10
-20
-50 -100
-200
-500
-1
-1.5
-2
-2.5
-3
0
-0.5
Input Voltage, VI(OFF) (V)
Output Current, IoUT(mA)
Output Voltage vs. Output Current
DC Current Gain vs. Output Current
-1000
-500
1k
VoUT= - 5V
Io/II=20
500
Ta=-100℃
25℃
-40℃
Ta=100℃
200
-200
-100
25℃
-40℃
100
50
-50
-20
-10
-5
20
10
5
2
1
-2
-1
-0.5
-1
-2
-5
-10
-20
-50 -100
-200
-500
-0.5
-1
-2
-5
-10
-20
-50 -100
-200
-500
Output Current, IoUT(mA)
Output Current, IoUT (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
www.unisonic.com.tw
QW-R206-042,B
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