DTC114YG-AE3-R [UTC]
NPN DIGITAL TRANSISTOR; NPN数字晶体管
| 型号： | DTC114YG-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN DIGITAL TRANSISTOR |
| 文件： | 总3页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
DTC114Y
NPN SILICON TRANSISTOR
NPN DIGITAL TRANSISTOR
(BUILT- IN BIAS RESISTORS)
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow negative input.
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
2
I
3
O
O
O
I
DTC114YL-AE3-R
DTC114YL-AL3-R
DTC114YL-AN3-R
DTC114YL-T92-B
DTC114YL-T92-K
DTC114YL-T92-R
DTC114YL-T9S-K
DTC114YG-AE3-R
DTC114YG-AL3-R
DTC114YG-AN3-R
DTC114YG-T92-B
DTC114YG-T92-K
DTC114YG-T92-R
DTC114YG-T9S-K
SOT-23
SOT-323
SOT-523
TO-92
TO-92
TO-92
G
G
G
G
G
G
G
Tape Reel
Tape Reel
Tape Reel
Tape Box
Bulk
I
I
O
O
O
O
I
I
I
Tape Reel
Bulk
TO-92SP
MARKING
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 3
QW-R223-003,D
DTC114Y
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
VCC
RATINGS
50
UNIT
V
Supply Voltage
Input Voltage
VIN
-6 ~ +40
70
V
IOUT
mA
mA
Output Current
IO(MAX.)
100
SOT-23/SOT-323
200
SOT-523
TO-92
150
Power Dissipation
PD
mW
625
TO-92SP
550
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
°C
°C
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL SPECIFICATIONS (TA=25°C, unless others specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN
1.4
TYP MAX UNIT
VIN(OFF) VCC =5V, IOUT =100μA
VIN(ON) VOUT =0.3V, IOUT =1mA
VOUT(ON) IOUT/IIN =5mA/0.25mA
0.3
V
V
Input Voltage
Output Voltage
Input Current
0.1
0.3
0.88
0.5
V
IIN
VIN=5V
mA
μA
Output Current
DC Current Gain
Input Resistance
IOUT(OFF) VCC =50V, VIN =0V
hFE
R1
R2
R1
VOUT =5V, IOUT =5mA
68
7
10
4.7
250
13
KΩ
Resistor Ratio
3.7
5.7
Transition Frequency
fT
VCE =10V, IE =−5mA, f=100MHz
MHz
Note: Transition frequency of the device
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R223-003,D
www.unisonic.com.tw
DTC114Y
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R223-003,D
www.unisonic.com.tw
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