DTC115TL-AE3-R [UTC]
Small Signal Bipolar Transistor,;型号: | DTC115TL-AE3-R |
厂家: | Unisonic Technologies |
描述: | Small Signal Bipolar Transistor, |
文件: | 总3页 (文件大小:160K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
DTC115T
NPN SILICON TRANSISTOR
NPN DIGITAL TRANSISTOR
(BUILT- IN BIAS RESISTORS)
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow negative input.
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
SOT-23
1
2
3
Lead Free
Halogen Free
DTC115TG-AE3-R
C: Collector
DTC115TL-AE3-R
B
E
C
Tape Reel
Note: Pin Assignment: B: Base E: Emitter
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R206-063.C
DTC115T
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless others specified)
PARAMETER
Collector-base voltage
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
50
50
Collector-emitter voltage
Emitter-base voltage
Collector current
V
5
V
100
mA
mW
°C
°C
Collector Power dissipation
Junction temperature
Storage temperature
PC
200
TJ
+150
-55 ~ +150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL SPECIFICATIONS (TA=25°C, unless others specified)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC=50μA
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
50
50
5
V
V
IC=1mA
IE=50μA
VCB=50V
VEB=4V
V
0.5
0.5
0.3
600
130
μA
μA
V
Emitter Cutoff Current
IEBO
Collector-Emitter Saturation Voltage
DC Current transfer Ratio
VCE(SAT) IC=1mA, IB=0.1mA
hFE
R1
fT
VCE=5V, IC=1mA
100
70
250
100
250
Input Resistance
KΩ
Transition Frequency
VCE=10V, IE=-5mA, f=100MHz
MHZ
Note: Transition frequency of the device.
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R206-063.C
www.unisonic.com.tw
DTC115T
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R206-063.C
www.unisonic.com.tw
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