DTC115T_11 [UTC]

NPN DIGITAL TRANSISTOR; NPN数字晶体管
DTC115T_11
型号: DTC115T_11
厂家: Unisonic Technologies    Unisonic Technologies
描述:

NPN DIGITAL TRANSISTOR
NPN数字晶体管

晶体 数字晶体管
文件: 总2页 (文件大小:125K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
DTC115T  
NPN SILICON TRANSISTOR  
NPN DIGITAL TRANSISTOR  
(BUILT- IN BIAS RESISTORS)  
„
FEATURES  
* Built-in bias resistors that implies easy ON/OFF applications.  
* The bias resistors are thin-film resistors with complete isolation to  
allow negative input.  
„
EQUIVALENT CIRCUIT  
„ ORDERING INFORMATION  
Order Number  
Pin Assignment  
Packing  
Package  
SOT-23  
Lead Free  
Halogen Free  
DTC115TL-AE3-6-R  
1
2
3
DTC115TL-AE3-6-R  
E
B
C
Tape Reel  
Note: Pin Assignment: E: Emitter, B: Base, C: Collector  
„
MARKING  
www.unisonic.com.tw  
1 of 2  
Copyright © 2011 Unisonic Technologies Co., Ltd  
QW-R206-063,Ba  
DTC115T  
NPN SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATINGS (TA=25°C)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
50  
50  
V
5
V
100  
mA  
mW  
°C  
°C  
Collector Power dissipation  
Junction temperature  
Storage temperature  
PC  
200  
TJ  
150  
TSTG  
-55 ~ +150  
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL SPECIFICATIONS (TA=25°C, unless others specified)  
PARAMETER  
SYMBOL  
BVCBO  
BVCEO  
BVEBO  
ICBO  
TEST CONDITIONS  
MIN TYP MAX UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
IC=50μA  
IC=1mA  
IE=50μA  
50  
50  
5
V
V
V
VCB=50V  
0.5  
0.5  
0.3  
μA  
μA  
V
Emitter Cutoff Current  
IEBO  
VEB=4V  
Collector-Emitter Saturation Voltage  
DC Current transfer Ratio  
VCE(SAT)  
hFE  
IC=1mA, IB=0.1mA  
VCE=5V, IC=1mA  
100 250 600  
Input Resistance  
R1  
70  
100 130  
250  
KΩ  
Transition Frequency  
fT  
VCE=10V, IE=-5mA, f=100MHz  
MHZ  
Note: Transition frequency of the device  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 2  
QW-R206-063,Ba  
www.unisonic.com.tw  

相关型号:

DTC115T_15

NPN DIGITAL TRANSISTOR
UTC

DTC115U

DIGITAL TRANSISTOR
ROHM

DTC115UA

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP
ETC

DTC115UAC2

Small Signal Bipolar Transistor, 0.02A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ATR, 3 PIN
ROHM

DTC115UC

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23
ETC

DTC115UCT216

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
ROHM

DTC115UE

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23VAR
ETC

DTC115UETL

暂无描述
ROHM

DTC115UETR

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
ROHM

DTC115UF

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71
ETC

DTC115UFC1

Small Signal Bipolar Transistor, 0.02A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, FTR, 3 PIN
ROHM

DTC115UK

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23VAR
ETC