DTC143EL-AL3-R [UTC]
NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS); NPN数字晶体管（内置电阻）
| 型号： | DTC143EL-AL3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS) |
| 文件： | 总3页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO.,
DTC143E
NPN EPITAXIAL SILICON TRANSISTOR
NPN DIGITAL TRANSISTOR
(BUILT-IN RESISTORS)
2
ꢀ FEATURES
1
*Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input
resistors (see the equivalent circuit).
3
*The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input
They also have the advantage of almost completely
eliminating parasitic effects.
*Only the on / off conditions need to be set for operation,
making device design easy.
SOT-323
ꢀ EQUIVALENT CIRCUIT ꢀ MARKING
*Pb-free plating product number:DTC143EL
OUT
R1
IN
ꢀ PIN CONFIGURATION
CE3
R2
PIN NO.
PIN NAME
GND
GND
1
2
3
IN
OUT
IN
GND
OUT
ꢀ ORDERING INFORMATION
Order Number
Package
Packing
Tape Reel
Normal
Lead free
DTC143E-AL3-R DTC143EL-AL3-R SOT-323
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,
1
QW-R220-015.A
DTC143E
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
Supply Voltage
SYMBOL
VCC
VIN
RATINGS
50
UNIT
V
Input Voltage
-10 ~ +30
100
V
Output Current
IC
mA
mW
℃
Power Dissipation
Junction Temperature
Storage Temperature
PD
200
TJ
150
℃
TSTG
-40 ~ +150
ꢀ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)
PARAMETER
Input Voltage
SYMBOL
VI(off)
VI(ON)
VO(ON)
II
TEST CONDITIONS
VCC= 5V, IO=100μA
MIN
TYP
MAX
0.5
UNIT
V
VO= 0.3V, IO= 20mA
IO/II= 10mA / 0.5 mA
VI= 5V
3
Output Voltage
Input Current
0.1
0.3
1.8
0.5
V
mA
μA
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
IO(off)
GI
VCC= 50V , VI=0V
VO= 5V, IO= 10mA
20
3.29
0.8
kΩ
R1
4.7
1
6.11
1.2
R2/R1
fT
VCE= 10 V, IE= -5mA, f=100MHz *
250
MHz
*Transition frequency of the device
UNISONIC TECHNOLOGIES CO., LTD
2
www.unisonic.com.tw
QW-R220-015.A
DTC143E
NPN EPITAXIAL SILICON TRANSISTOR
■ TYPICAL CHARACTERICS
Fig.1 Input voltage vs.output current
Fig.2 Output current vs Input voltage
(OFF characterristics)
(ON characterristics)
10m
5m
100
50
Vcc=5V
Vo=0.3V
Ta=100℃
25℃
-40℃
2m
1m
20
10
5
500μ
Ta=-40℃
25℃
200μ
100μ
50μ
100℃
2
1
20μ
10μ
5μ
500m
200m
100m
2μ
1μ
100μ
200μ
50m
100m
500μ1m 2m
5m
20m
10m
-1.0
0
0.5
2.0
1.5
2.5
3.0
Output Current :Io (A)
Fig.3 DC current gain vs.output current
Vo=5V
INPUT VOLTAGE: Vi(off) (V)
Fig.4 Output voltage vs. output current
Io/II=20
1K
1
500
500m
Ta=100℃
25℃
Ta=100℃
25℃
200
100
50
200m
100m
50m
-40℃
-40℃
20
20m
10
5
10m
5m
2
1
2m
1m
1m
100μ
200μ
50m
100m
100μ
200μ
500μ
2m
5m
20m
10m
50m
100m
1m
500μ
2m
5m 10m 20m
Output Current :Io(A)
Output Current :Io (A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3
www.unisonic.com.tw
QW-R220-015.A
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