DTC143TG-T9S-K [UTC]
NPN DIGITAL TRANSISTOR BUILT- IN BIAS RESISTORS); NPN数字晶体管内置的偏置电阻）
| 型号： | DTC143TG-T9S-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN DIGITAL TRANSISTOR BUILT- IN BIAS RESISTORS) |
| 文件： | 总3页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
DTC143T
NPN SILICON TRANSISTOR
NPN DIGITAL TRANSISTOR
(BUILT- IN BIAS RESISTORS)
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow negative input.
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
1
E
E
E
E
2
B
B
B
C
3
C
C
C
B
DTC143TL-AE3-R
DTC143TL-AL3-R
DTC143TL-AN3-R
DTC143TL-T9S-K
DTC143TG-AE3-R
DTC143TG-AL3-R
DTC143TG-AN3-R
DTC143TG-T9S-K
SOT-23
SOT-323
SOT-523
TO-92SP
Tape Reel
Tape Reel
Tape Reel
Bulk
Note: Pin Assignment: E: Emitter, B: Base, C: Collector
MARKING (For SOT Package)
www.unisonic.com.tw
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Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R206-059,F
DTC143T
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25℃, unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
50
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
50
V
5
V
100
mA
SOT-523
150
Collector Power Dissipation SOT-23/SOT-323
TO-92SP
PC
200
mW
550
Junction Temperature
TJ
+150
-55~+150
℃
℃
Storage Temperature
TSTG
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BVCBO IC =50μA
BVCEO IC =1mA
BVEBO IE =50μA
50
50
5
V
V
V
ICBO
IEBO
VCE(SAT) IC =5mA, IB=0.25mA
VCB=50V
0.5
0.5
0.3
μA
μA
V
Emitter Cut-off Current
VEB =4V
Collector-Emitter Saturation Voltage
DC Current Gain
hFE
R1
fT
VCE=5V, IC=1mA
100 250 600
3.29 4.7 6.11 kΩ
Input Resistance
Transition Frequency
VCE=10V, IE =5mA, f=100MHz (Note)
250
MHz
Note: Transition frequency of the device.
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R206-059,F
www.unisonic.com.tw
DTC143T
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector-Emitter Saturation Voltage vs.
DC Current Gain vs. Collector Current
Collector Current
1000
1
VCE
Ic/IB
=5V
=20
500m
200m
500
200
TA=100
25
TA=100
100m
50m
100
50
-40
25
-40
20m
20
10
5
10m
5m
2
2m
1m
1
0.1
0.2
2
5
100
10
1
20
50
0.1 0.2
0.5
1
2
5
10 20
50
0.5
100
Collector Current, IC (mA)
Collector Current, IC (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R206-059,F
www.unisonic.com.tw
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