DTC143TL-AL3-R [UTC]
NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS); NPN数字晶体管（内置偏置电阻）
| 型号： | DTC143TL-AL3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) |
| 文件： | 总3页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
DTC143T
NPN SILICON TRANSISTOR
NPN DIGITAL TRANSISTOR
(BUILT- IN BIAS RESISTORS)
3
SOT-23
1
2
ꢀ
FEATURES
3
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow negative input.
SOT-323
SOT-523
1
2
ꢀ
EQUIVALENT CIRCUIT
3
C
R
1
B
1
2
E
* Pb-free plating product number: DTC143TL
ꢀ ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Normal
Lead Free Plating
1
E
E
E
2
B
B
B
3
C
C
C
DTC143T-AE3-R
DTC143T-AL3-R
DTC143T-AN3-R
DTC143TL-AE3-R
DTC143TL-AL3-R
DTC143TL-AN3-R
SOT-23
SOT-323
SOT-523
Tape Reel
Tape Reel
Tape Reel
DTC143TL-AE3-R
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(3)Lead Plating
(2) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523
(3) L: Lead Free Plating, Blank: Pb/Sn
ꢀ
MARKING
CE3T
C5T
For SOT -23/SOT-323 Package
For SOT-523 Package
www.unisonic.com.tw
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Copyright © 2005 Unisonic Technologies Co., Ltd
QW-R206-059,D
DTC143T
NPN SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATINGS (Ta=25°C , unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
50
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
50
V
5
V
100
mA
mW
mW
℃
SOT-523
SOT-23/SOT-323
150
Collector Power Dissipation
PC
200
Junction Temperature
Storage Temperature
TJ
+150
-55~+150
TSTG
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25
°
C, unless otherwise specified.)
PARAMETER SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BVCBO IC =50µA
BVCEO IC =1mA
BVEBO IE =50µA
50
50
5
V
V
V
ICBO
IEBO
VCB=50V
VEB =4V
0.5
0.5
0.3
µA
µA
V
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
DC Current Gain
VCE(SAT) IC =5mA, IB=0.25mA
hFE
R1
fT
VCE=5V, IC=1mA
100 250 600
3.29 4.7 6.11 kΩ
Input Resistance
Transition Frequency
VCE =10V, IE =5mA, f=100MHz *
250
MHz
* Transition frequency of the device.
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R206-059,D
www.unisonic.com.tw
DTC143T
NPN SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS
Collector-Emitter Saturation Voltage vs.
Collector Current
DC Current Gain vs. Collector Current
CE =5V
1000
500
1
V
Ic/IB=20
500m
Ta=100℃
25℃
200m
200
100
50
Ta=100℃
100m
50m
-40℃
25℃
-40℃
20m
20
10
5
10m
5m
2
1
2m
1m
0.1
100
0.2
0.5
1
2
5
10 20
50 100
0.1 0. 2
0.5
1
2
5
10 20
50
Collector Current, Ic (mA)
Collector Current, Ic (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R206-059,D
www.unisonic.com.tw
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