DTC144TG-AE3-R [UTC]
NPN DIGITAL TRANSISTOR BUILT- IN BIAS RESISTORS); NPN数字晶体管内置的偏置电阻）
| 型号： | DTC144TG-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN DIGITAL TRANSISTOR BUILT- IN BIAS RESISTORS) |
| 文件： | 总3页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
DTC144T
NPN SILICON TRANSISTOR
NPN DIGITAL TRANSISTOR
(BUILT- IN BIAS RESISTORS)
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow negative input.
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
E
E
E
2
B
B
B
3
C
C
C
DTC144TL-AE3-R
DTC144TL-AL3-R
DTC144TL-AN3-R
DTC144TG-AE3-R
DTC144TG-AL3-R
DTC144TG-AN3-R
SOT-23
SOT-323
SOT-523
Tape Reel
Tape Reel
Tape Reel
Note: Pin Assignment: E: Emitter, B: Base, C: Collector
MARKING
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R206-066.C
DTC144T
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA = 25℃)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
50
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
50
V
5
V
100
mA
mW
mW
℃
SOT-523
150
Collector Power Dissipation
PC
SOT-23/SOT-323
200
Junction Temperature
Storage Temperature
TJ
150
TSTG
-55~+150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA= 25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVCBO IC=50μA
BVCEO IC=1mA
BVEBO IE=50μA
50
50
5
V
V
V
ICBO
IEBO
VCB=50V
VEB=4V
0.5
0.5
0.3
μA
μA
V
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
VCE(SAT) IC=5mA, IB=0.5mA
hFE
R1
fT
VCE=5V, IC=1mA
100 250 600
Input Resistance
32.9
47
61.1 KΩ
Transition Frequency
VCE=10V, IE=-5mA, f=100MHz (Note)
250
MHz
Note: Transition frequency of the device
UNISONIC TECHNOLOGIES CO., LTD
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www.unisonic.com.tw
QW-R206-066,C
DTC144T
■ TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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www.unisonic.com.tw
QW-R206-066,C
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