DTD113ZL-AE3-R [UTC]
NPN DIGITAL TRANSISTOR BUILT- IN BIAS RESISTORS); NPN数字晶体管内置的偏置电阻）
| 型号： | DTD113ZL-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN DIGITAL TRANSISTOR BUILT- IN BIAS RESISTORS) |
| 文件： | 总3页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
DTD113Z
NPN SILICON TRANSISTOR
NPN DIGITAL TRANSISTOR
(BUILT- IN BIAS RESISTORS)
3
3
1
1
2
2
SOT-523
FEATURES
SOT-323
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow negative input.
3
1
2
EQUIVALENT CIRCUIT
SOT-23
1
TO-92
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
I
I
3
O
O
O
I
DTD113ZL-AE3-R
DTD113ZL-AL3-R
DTD113ZL-AN3-R
DTD113ZL-T92-B
DTD113ZL-T92-K
DTD113ZL-T92-R
DTD113ZLG-AE3-R
DTD113ZLG-AL3-R
DTD113ZLG-AN3-R
DTD113ZLG-T92-B
DTD113ZLG-T92-K
DTD113ZLG-T92-R
SOT-23
SOT-323
SOT-523
TO-92
TO-92
TO-92
G
G
G
G
G
G
Tape Reel
Tape Reel
Tape Reel
Tape Box
Bulk
I
O
O
O
I
I
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-082.F
DTD113Z
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
VCC
RATINGS
50
UNIT
V
Supply Voltage
Input Voltage
Output Current
VIN
-5 ~ +10
500
V
IOUT
mA
mW
mW
mW
°C
SOT-23/SOT-323
SOT-523
200
Power Dissipation
PC
150
TO-92
625
Junction Temperature
Storage Temperature
TJ
+150
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL SPECIFICATIONS (TA=25°C, unless others specified)
PARAMETER
SYMBOL
VIN(OFF)
VIN(ON)
VOUT(ON)
IIN
TEST CONDITIONS
VCC =5V, IOUT =100μA
MIN
1.5
TYP MAX UNIT
0.3
V
Input Voltage
VOUT =0.3V, IOUT =20mA
IOUT/IIN =50mA/2.5mA
VIN=5V
Output Voltage
Input Current
0.1
0.3
7.2
0.5
V
mA
μA
Output Current
DC Current Gain
Input Resistance
Resistor Ratio
IOUT(OFF)
hFE
VCC =50V, VIN =0V
VOUT =5V, IOUT =50mA
82
0.7
8
R1
1
1.3
12
KΩ
R2/R1
fT
10
Transition Frequency
VCE =10V, IE =−50mA, f=100MHz (Note)
200
MHz
Note: Transition frequency of the device
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R206-082.F
www.unisonic.com.tw
DTD113Z
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R206-082.F
www.unisonic.com.tw
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