DTD114E-AE3-R [UTC]

NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS); NPN数字晶体管(内置偏置电阻)
DTD114E-AE3-R
型号: DTD114E-AE3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)
NPN数字晶体管(内置偏置电阻)

晶体 数字晶体管
文件: 总3页 (文件大小:202K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
DTD114E  
NPN SILICON TRANSISTOR  
NPN DIGITAL TRANSISTOR  
(BUILT- IN BIAS RESISTORS)  
„
FEATURES  
* Built-in bias resistors that implies easy ON/OFF applications.  
* The bias resistors are thin-film resistors with complete isolation to  
allow negative input.  
„
EQUIVALENT CIRCUIT  
*Pb-free plating product number:DTD114EL  
„ ORDERING INFORMATION  
Order Number  
Pin Assignment  
Packing  
Package  
Normal  
Lead Free Plating  
1
G
G
2
I
3
O
O
DTD114E-AE3-R  
DTD114E-AL3-R  
DTD114EL-AE3-R  
DTD114EL-AL3-R  
SOT-23  
SOT-323  
Tape Reel  
Tape Reel  
I
„
MARKING  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co., Ltd  
1 of 3  
QW-R206-043,B  
DTD114E  
NPN SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)  
PARAMETER  
SYMBOL  
VCC  
RATING  
50  
UNIT  
V
Supply Voltage  
Input Voltage  
VIN  
-10~+40  
500  
V
Output Current  
IOUT  
PD  
mA  
mW  
°C  
Power Dissipation  
Junction Temperature  
Storage Temperature  
200  
TJ  
150  
TSTG  
-55 ~ +150  
°C  
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL SPECIFICATIONS (Ta=25°C, unless others specified)  
PARAMETER SYMBOL TEST CONDITIONS  
VIN(OFF) VCC =5V, IOUT =100μA  
MIN  
3
TYP MAX UNIT  
0.5  
V
Input Voltage  
VOUT =0.3V, IOUT =10mA  
VOUT(ON) IOUT/IIN =50mA/2.5mA  
IIN VIN=5V  
IOUT(OFF) VCC =50V, VIN =0V  
VIN(ON)  
Output Voltage  
Input Current  
0.1  
0.3  
0.88  
0.5  
V
mA  
μA  
Output Current  
DC Current Gain  
Input Resistance  
Resistance Ratio  
Transition Frequency  
hFE  
R1  
VOUT =5V, IOUT =50mA  
56  
7
10  
1
13  
kΩ  
R2/R1  
fT  
0.8  
1.2  
VCE =10V, IE =50mA, f=100MHz  
200  
MHz  
*Transition frequency of the device  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R206-043,B  
www.unisonic.com.tw  
DTD114E  
NPN SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R206-043,B  
www.unisonic.com.tw  

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