DTD123YL-T92-R [UTC]
DIGITAL TRANSISTORS BUILT-IN RESISTORS); 数字晶体管内置电阻)型号: | DTD123YL-T92-R |
厂家: | Unisonic Technologies |
描述: | DIGITAL TRANSISTORS BUILT-IN RESISTORS) |
文件: | 总3页 (文件大小:136K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
DTD123Y
NPN SILICON TRANSISTOR
DIGITAL TRANSISTORS
(BUILT-IN RESISTORS)
3
3
1
1
2
2
FEATURES
SOT-323
SOT-23
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow negative input.
EQUIVALENT CIRCUIT
1
TO-92
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
I
3
O
O
I
DTD123YL-AE3-R
DTD123YL-AL3-R
DTD123YL-T92-B
DTD123YL-T92-K
DTD123YL-T92-R
DTD123YG-AE3-R
DTD123YG-AE3-R
DTD123YG-T92-B
DTD123YG-T92-K
DTD123YG-T92-R
SOT-23
SOT-323
TO-92
G
G
G
G
G
Tape Reel
Tape Reel
Tape Box
Bulk
I
O
O
O
TO-92
I
TO-92
I
Tape Reel
Note: G: GND I: Input O: Output
DTD123YL-AE3-R
(1)Packing Type
(1) B: Tape Box, K: Bluk, R: Tape Reel
(2) AE3: SOT-23, AL3: SOT-323,T92: TO-92
(3) G: Halogen Free, L: Lead Free
(2)Package Type
(3)Lead Free
MARKING
For SOT-23/SOT-323
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-087,C
DTD123Y
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25℃)
PARAMETER
SYMBOL
RATINGS
50
UNIT
V
Supply voltage
Input voltage
Output current
VCC
VIN
IC
-5 ~ +12
500
V
mA
mW
mW
℃
SOT-23/SOT-323
TO-92
200
Power dissipation
PD
625
Junction Temperature
Storage Temperature
TJ
+150
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25℃)
PARAMETER SYMBOL TEST CONDITIONS
MIN
2
TYP
0.1
MAX
0.3
UNIT
V
VIN(OFF) VCC=5V, IOUT=100μA
VIN(ON) VOUT=0.3V, IOUT=20mA
VOUT(ON) IO/II=50mA/2.5mA
Input Voltage
Output Voltage
Input Current
0.3
3.6
0.5
V
IIN
IO(OFF)
hFE
VIN=5V
mA
μA
Output Current
VCC=50V, VIN=0V
VOUT=5V, IOUT=50mA
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
56
1.54
3.6
R1
2.2
4.5
2.86
5.5
KΩ
R2/R1
fT
VCE=10V, IE= −50mA, f=100MHz (Note)
200
MHz
Note: Transition frequency of the device
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R206-087,C
www.unisonic.com.tw
DTD123Y
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Fig.1 Input Voltage vs. Output Current
(ON Characteristics)
Fig.2 Output Current vs. Input Voltage
(OFF Characteristics)
10
5
100
50
VCC=5V
VOUT=0.3V
2
1
20
0.5
10
5
TA=100℃
25℃
0.2
0.1
TA=-40℃
25℃
-40℃
2
1
0.05
100℃
0.02
0.01
500m
0.005
200m
100m
0.002
0.001
0
0.5
1.0 1.5
2.0
2.5
3.0
0.5
1
2
5
10 20 50 100 200 500
Input Voltage, VI(OFF) (V)
Output current, IOUT (mA)
Fig.3 DC Current Gain vs. Output Current
VOUT=5V
Fig.4 Output Voltage vs. Output Current
IO/II=20
1K
1000
500
500
TA=100℃
25℃
TA=100℃
25℃
200
200
100
50
-40℃
-40℃
100
50
20
20
10
10
5
5
2
1
2
1
0.5
0.5 1
2
5
10 20 50 100 200 500
2
5
10 20 50 100 200 500
Output Current, IOUT (mA)
Output Current, IOUT (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R206-087,C
www.unisonic.com.tw
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