DTD143EG-T92-K

更新时间:2024-09-18 08:41:44
品牌:UTC
描述:DIGITAL TRANSISTORS BUILT- IN RESISTORS)

DTD143EG-T92-K 概述

DIGITAL TRANSISTORS BUILT- IN RESISTORS) 数字晶体管内置电阻器)

DTD143EG-T92-K 数据手册

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UNISONIC TECHNOLOGIES CO., LTD  
DTD143E  
NPN SILICON TRANSISTOR  
DIGITAL TRANSISTORS  
(BUILT- IN RESISTORS)  
3
3
1
1
2
2
„
FEATURES  
SOT-323  
SOT-23  
* Built-in bias resistors that implies easy ON/OFF applications.  
* The bias resistors are thin-film resistors with complete isolation to  
allow positive input.  
„
EQUIVALENT CIRCUIT  
1
TO-92  
„ ORDERING INFORMATION  
Order Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
2
I
3
DTD143EL-AE3-R  
DTD143EL-AL3-R  
DTD143EL-T92-B  
DTD143EL-T92-K  
DTD143EL-T92-R  
DTD143EG-AE3-R  
DTD143EG-AE3-R  
DTD143EG-T92-B  
DTD143EG-T92-K  
DTD143EG-T92-R  
SOT-23  
SOT-323  
TO-92  
TO-92  
TO-92  
G
G
G
G
G
O
O
I
Tape Reel  
Tape Reel  
Tape Box  
Bulk  
I
O
O
O
I
I
Tape Reel  
„
MARKING(FOR SOT-23/SOT-323 PACKAGE)  
DE3E  
E: Lead Free  
E: Halogen Free  
www.unisonic.com.tw  
1 of 3  
Copyright © 2011 Unisonic Technologies Co., Ltd  
QW-R206-084,C  
DTD143E  
NPN SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATINGS (TA=25°C)  
PARAMETER  
SYMBOL  
VCC  
RATINGS  
50  
UNIT  
V
Supply Voltage  
Input Voltage  
Output Current  
VIN  
-10 ~ +30  
500  
V
IOUT  
mA  
mW  
mW  
°C  
SOT-23/SOT-323  
TO-92  
200  
Power Dissipation  
PD  
625  
Junction Temperature  
Storage Temperature  
TJ  
+150  
TSTG  
-55 ~ +150  
°C  
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL SPECIFICATIONS (TA=25°C)  
PARAMETER  
SYMBOL  
VIN(OFF)  
VIN(ON)  
TEST CONDITIONS  
VCC =5V, IOUT =100μA  
VOUT =0.3V, IOUT =20mA  
MIN  
3
TYP MAX UNIT  
0.5  
V
Input Voltage  
Output Voltage  
Input Current  
VOUT(ON) IOUT/IIN =50mA/2.5mA  
IIN VIN=5V  
IOUT(OFF) VCC =50V, VIN =0V  
0.1  
0.3  
1.8  
0.5  
V
mA  
μA  
Output Current  
DC Current Gain  
Input Resistance  
Resistance Ratio  
Transition Frequency  
hFE  
R1  
VOUT =5V, IOUT =50mA  
47  
3.29  
0.8  
4.7  
1
6.11  
1.2  
KΩ  
R2/R1  
fT  
VCE =10V, IE =50mA, f=100MHz(Note)  
200  
MHz  
Note: Transition frequency of the device  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R206-084,C  
www.unisonic.com.tw  
DTD143E  
NPN SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTIC  
Output Voltage vs. Output Current  
lOUT/lIN=20  
DC Current Gain vs. Output Current  
VOUT=5V  
1K  
1000  
500  
500  
TA=100  
25  
TA=100  
25  
200  
200  
100  
50  
-40  
-40  
100  
50  
20  
10  
5
20  
10  
5
2
1
2
1
0.5  
1
2
5
10 20 50 100 200 500  
0.5  
1
2
5
10 20 50 100 200 500  
Output Current, IOUT (mA)  
Output Current, IOUT (mA)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R206-084,C  
www.unisonic.com.tw  

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