HE8550L-C-AB3-R [UTC]
Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FREE PACKAGE-3;型号: | HE8550L-C-AB3-R |
厂家: | Unisonic Technologies |
描述: | Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FREE PACKAGE-3 放大器 晶体管 |
文件: | 总4页 (文件大小:156K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
HE8550
PNP SILICON TRANSISTOR
LOW VOLTAGE HIGH
CURRENT SMALL SIGNAL PNP
TRANSISTOR
DESCRIPTION
The UTC HE8550 is a low voltage high current small signal PNP
transistor, designed for Class B push-pull 2W audio amplifier for
portable radio and general purpose applications.
FEATURES
* Collector Current up to 1.5A
* Collector-Emitter Voltage up to 25V
* Complimentary to UTC HE8050
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free
Halogen Free
1
B
E
E
E
E
E
2
C
B
C
C
C
C
3
E
C
B
B
B
B
HE8550-x-AB3-R
HE8550-x-AE3-R
HE8550-x-T92-B
HE8550-x-T92-K
HE8550-x-T9N-B
HE8550-x-T9N-K
HE8550L-x-AB3-R
HE8550L-x-AE3-R
HE8550L-x-T92-B
HE8550L-x-T92-K
HE8550L-x-T9N-B
HE8550L-x-T9N-K
HE8550G-x-AB3-R
HE8550G-x-AE3-R
HE8550G-x-T92-B
HE8550G-x-T92-K
HE8550G-x-T9N-B
HE8550G-x-T9N-K
SOT-89
SOT-23
TO-92
Tape Reel
Tape Reel
Tape Box
Bulk
TO-92
TO-92NL
TO-92NL
Tape Box
Bulk
MARKING(For SOT-23 Package)
BA
L: Lead Free
G: Halogen Free
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Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R206-031,G
HE8550
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-40
-25
VCEO
V
VEBO
-6
V
SOT-23
350
mW
W
Collector Dissipation
SOT-89
PC
0.5
TO-92/TO-92NL
1
W
Collector Current
IC
TJ
-1.5
A
Junction Temperature
Storage Temperature
+150
-65 ~ +150
°C
°C
TSTG
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage BVCEO IC=-2mA, IB=0
SYMBOL
TEST CONDITIONS
MIN
-40
-25
-6
TYP
MAX
UNIT
V
BVCBO IC=-100μA, IE=0
V
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
BVEBO IE=-100μA, IC=0
V
ICBO
IEBO
hFE1
hFE2
hFE3
VCB=-35V, IE=0
-100
-100
nA
nA
VEB=-6V, IC=0
VCE=-1V, IC=-5mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
45
85
40
170
160
80
DC Current Gain
500
Collector-Emitter Saturation Voltage VCE(SAT) IC=-800mA, IB=-80mA
-0.28
-0.98
-0.66
190
9.0
-0.5
-1.2
-1.0
V
V
Base-Emitter Saturation Voltage
Base-Emitter Voltage
VBE(SAT
VBE
fT
)
IC=-800mA, IB=-80mA
VCE=-1V,IC=-10mA
V
Current Gain Bandwidth Product
Output Capacitance
VCE=-10V,IC=-50mA
VCB=-10V, IE=0 f=1MHz
100
MHz
pF
Cob
CLASSIFICATION OF hFE2
RANK
C
D
E
RANGE
120-200
160-300
250-500
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-031,G
www.unisonic.com.tw
HE8550
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Static Characteristics
DC Current Gain
VCE=-1V
103
102
-0.5
-0.4
IB=-3.0mA
-0.3
-0.2
IB=-2.5mA
IB=-2.0mA
IB=-1.5mA
101
100
IB=-1.0mA
IB=-0.5mA
-0.1
0
-10-1
-100
-101
-102
-103
-0
-0.4
-0.8 -1.2 -1.6 -2.0
Collector-Emitter Voltage ( V)
Collector Current, IC (mA)
Base-Emitter on Voltage
VCE=-1V
Saturation Voltage
-103
-102
-104
-103
IC=10*IB
VBE(SAT)
-101
-100
-102
-101
VCE(SAT)
-10-1
-100
-101
-102
-103
0
-0.2 -0.4
-0.6
-0.8 -1.0
Collector Current, IC (mA)
Base-Emitter Voltage (V)
Current Gain-Bandwidth Product
VCE=-10V
Collector Output Capacitance
f=1MHz
103
102
103
102
IE=0
101
100
101
100
-100
-101
-102
-103
-100
-101
-102
-103
Collector Current, IC (mA)
Collector-Base Voltage (V)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-031,G
www.unisonic.com.tw
HE8550
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-031,G
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相关型号:
HE8550L-C-AE3-R
Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FREE PACKAGE-3
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