HLB124 [UTC]
NPN EPITAXIAL PLANAR TRANSISTOR; NPN外延平面晶体管
| 型号： | HLB124 |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 文件： | 总3页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC HLB124
NPN EPITAXIAL SILICON TRANSISTOR
NPN EPITAXIAL PLANAR TRANSISTOR
DESCRIPTION
The UTC HLB124 is designed for high voltage, high
speed switching inductive circuits, and amplifier
applications.
1
FEATURES
* High Speed Switching
* Low Saturation Voltage
* High Reliability
TO-220
1: BASE 2: COLLECTOR 3: EMITTER
*Pb-free plating product number: HLB124L
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (PULSE)
Base Current (DC)
SYMBOL
RATINGS
UNIT
V
V
V
A
A
A
VCBO
VCEO
VEBO
Ic
ICP
IB
600
400
8
2
4
1
Base Current (PULSE)
IBP
Pc
TJ
TSTG
2
35
150
A
Total Power Dissipation (Tc=25℃)
W
℃
℃
Junction Temperature
Storage Temperature
-40 ~ +150
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified.)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IC = 1mA
600
400
8
V
V
IC = 10mA
IE = 1mA
V
VCB = 600V
10
10
0.3
0.8
0.9
1.2
40
µA
µA
V
Emitter Cutoff Current
VEB = 9V, IC = 0
IC = 0.1A, IB = 10mA
IC = 0.3A, IB = 30mA
IC = 0.1A, IB = 10mA
IC = 0.3A, IB = 30mA
VCE = 5V, IC = 0.3A
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 1A
IEBO
*VCE (sat) 1
*VCE (sat) 2
*VBE (sat) 1
*VBE (sat) 2
*hFE1
C-E Saturation Voltage
V
V
B-E Saturation Voltage
V
10
10
6
DC Current Gain
*hFE2
*hFE3
Gain-Bandwidth Product
fT
VCE = 10V, IC = 0.3A, f=1MHz
15
MHz
*Pulse Test : Pulse Width ≤ 380µs, Duty Cycle ≤ 2%
CLASSIFICATION OF HFE1
UTC UNISONIC TECHNOLOGIES CO., LTD.
1
www.unisonic.com.tw
QW-R203-029,A
UTC HLB124
NPN EPITAXIAL SILICON TRANSISTOR
RANK
Range
B1
B2
B3
B4
B5
B6
33 ~ 40
10 ~ 17
13 ~ 22
18 ~ 27
23 ~ 32
28 ~ 37
CHARACTERISTICS CURVE
Current Gain & Collector Current
Saturation Voltage & Collector Current
100
10
1
100000
10000
125℃
25℃
75℃
75℃
100
0
125℃
25℃
100
10
V
CE(sat) @ I
1000
(mA)
C
= 10I
B
hFE @ VCE = 5V
1
10
Collector Current, I
1000
1
10
100
10000
100
10000
C
(mA)
Collector Current, I
C
Saturation Voltage & Collector Current
On Voltage & Collector Current
VCE = 5V
10000
1000
1000
75℃
25℃
125℃
VBE(sat) @ IC = 10IB
100
100
1
1000
1
1000
10
100
10000
10
100
10000
Collector Current, IC (mA)
Collector Current(mA)
Capacitance & Reverse-Biased Voltage
Swithing Time & Collector Current
VCC = 100V, IC = 5IB1 = 5IB2
100
10
Ton
Cob
1
10
TSTG
Tf
1
0.1
1
0.1
10
100
1
10
Reverse Biased Voltage (V)
Collector Current (A)
UTC UNISONIC TECHNOLOGIES CO., LTD.
2
www.unisonic.com.tw
QW-R203-029,A
UTC HLB124
NPN EPITAXIAL SILICON TRANSISTOR
Safe operating Area
10000
1000
100
PT = 1ms
PT = 100ms
PT = 1s
10
1
1
10
100
1000
Forward Voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC UNISONIC TECHNOLOGIES CO., LTD.
3
www.unisonic.com.tw
QW-R203-029,A
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