MCR100-8 [UTC]

PLASTIC SILICON CONTROLLED RECTIFIERS(PNPN devices designed for high volume); 塑封硅控整流器(专为高容量PNPN设备)
MCR100-8
型号: MCR100-8
厂家: Unisonic Technologies    Unisonic Technologies
描述:

PLASTIC SILICON CONTROLLED RECTIFIERS(PNPN devices designed for high volume)
塑封硅控整流器(专为高容量PNPN设备)

文件: 总2页 (文件大小:19K)
中文:  中文翻译
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UTC MCR100  
SCR  
PLASTIC SILICON  
CONTROLLED RECTIFIERS  
DESCRIPTION  
PNPN devices designed for high volume, line-  
powered consumer applications such as relay and  
lamp drivers, small motor controls, gate drivers for  
larger thyristors, and sensing and detection circuits.  
Supplied in an inexpensive plastic TO-92 package  
which isreladily adaptable for use in automatic  
insertion equipment.  
1
DESCRIPTION  
TO-92  
*Sensitive Gate Trigger Current - 200mA Maximum  
*Low Reverse and forward Blocking Current - 100mA  
Maximum, Tc=125°C  
*Low Holding Current – 5mA Maximum  
*Glass-Passivated Surface for Reliability and  
Uniformity  
1:CATHODE 2:GATE 3:ANODE  
*Also Available with TO-5 or TO-18 Lead Form  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
R£ cJC  
MAX  
75  
UNIT  
°C/W  
°C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R£ cJA  
200  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
Peak Reverse Blocking Voltage  
MCR100-4  
SYMBOL  
MAX  
UNIT  
V
VRRM  
200  
400  
600  
0.8  
10  
MCR100-6  
MCR100-8  
Forward Current RMS  
IT(RMS)  
ITSM  
A
A
Peak Forward Surge Current, TA=25°C  
(1/2 cycle, Sine Wave, 60Hz)  
Circuit Fusing Considerations, TA=25°C  
(t=1 to 8.3 ms)  
I2t  
0.415  
A2s  
Peak Gate Power – Forward, TA=25°C  
Average Gate Power – Forward, TA=25°C  
Peak Gate Current – Forward, TA=25°C(300ms, 120PPS)  
Peak Gate Voltage - Reverse  
Operating Junction Temperature Range @ Rated VRRM and  
VDRM  
PGM  
PGF(AV)  
IGFM  
0.1  
W
W
A
0.01  
1
VGRM  
Tj  
5
V
-65 to +110  
°C  
Storage Temperature Range  
Lead Solder Temperature  
Tstg  
-40 to +150  
230  
°C  
°C  
(<1/16” from case, 10 s max)  
1
UTC UNISONIC TECHNOLOGIES CO., LTD.  
UTC MCR100  
SCR  
ELECTRICAL CHARACTERISTICS (Tj=25°C unless otherwise stated)  
PARAMETER  
Peak Forward Blocking Voltage  
(Tc=125°C)  
SYMBOL  
MIN  
MAX  
UNIT  
V
VDRM  
MCR100-4  
MCR100-6  
MCR100-8  
200  
400  
600  
Peak Forward or Reverse Blocking Current  
IDRM,IRRM  
(Rated VDRM or VRRM)  
Tc=25°C  
10  
100  
1.7  
mA  
mA  
V
Tc=125°C  
Forward “ On” Voltage (Note1)  
VTM  
IGT  
(ITM=1A peak @ TA=25°C)  
Gate Trigger Current (continuous dc) (Note 2)  
(Anode Voltage=7Vdc, RL=100W)  
Gate Trigger Voltage (continuous dc)  
(Anode voltage=7Vdc, RL=100W)  
(Anode Voltage=Rated VDRM, RL=100W)  
Holding Current  
Tc=25 °C  
200  
mA  
Tc=25 °C  
Tc=-40 °C  
Tc=125 °C  
Tc=25 °C  
VGT  
0.8  
1.2  
V
0.1  
IH  
5
mA  
(Anode Voltage=7Vdc, initiating current=20mA) Tc=-40 °C  
10  
Notes: 1. Forward current applied for 1 ms maximum duration, duty cycle <=1%  
2. RGK current is not included in measurement.  
2
UTC UNISONIC TECHNOLOGIES CO., LTD.  

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