MCR100L-8-X-T92-B [UTC]
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS;
| 型号： | MCR100L-8-X-T92-B |
| 厂家： | 
Unisonic Technologies |
| 描述： | SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS |
| 文件： | 总6页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MCR100
SCR
SENSITIVE GATE SILICON
CONTROLLED RECTIFIERS
REVERSE BLOCKING
THYRISTORS
3
1
2
1
SOT-89
SOT-23
DESCRIPTION
PNPN devices designed for high volume, line-powered
consumer applications such as relay and lamp drivers, small motor
controls, gate drivers for larger thyristors, and sensing and
detection circuits.
1
TO-92
FEATURES
* Sensitive gate allows triggering by micro controllers and other
logic circuits
* Blocking voltage to 600V
* On-state current rating of 0.8A RMS at 80°C
* High surge current capability – 10A
Lead-free:
Halogen-free:MCR100G
MCR100L
* Minimum and maximum values of IGT, VGT and IH specified for
ease of design
* Immunity to dV/dt – 20V/μsec minimum at 110°C
* Glass-passivated surface for reliability and uniformity
ORDERING INFORMATION
Ordering Number
Pin assignment
Package
Packing
Normal
Lead Free Plating
Halogen Free
1
G
G
K
K
G
G
K
K
G
G
K
K
2
A
K
G
G
A
K
G
G
A
K
G
G
3
K
A
A
A
K
A
A
A
K
A
A
A
MCR100-4-x-AB3-R MCR100L-4-x-AB3-R MCR100G-4-x-AB3-R SOT-89
MCR100-4-x-AE3-R MCR100L-4-x-AE3-R MCR100G-4-x-AE3-R SOT-23
Tape Reel
Tape Reel
Tape Box
Bulk
MCR100-4-x-T92-B MCR100L-4-x-T92-B MCR100G-4-x-T92-B
MCR100-4-x-T92-K MCR100L-4-x-T92-K MCR100G-4-x-T92-K
TO-92
TO-92
MCR100-6-x-AB3-R MCR100L-6-x-AB3-R MCR100G-6-x-AB3-R SOT-89
MCR100-6-x-AE3-R MCR100L-6-x-AE3-R MCR100G-6-x-AE3-R SOT-23
Tape Reel
Tape Reel
Tape Box
Bulk
MCR100-6-x-T92-B MCR100L-6-x-T92-B MCR100G-6-x-T92-B
MCR100-6-x-T92-K MCR100L-6-x-T92-K MCR100G-6-x-T92-K
TO-92
TO-92
MCR100-8-x-AB3-R MCR100L-8-x-AB3-R MCR100G-8-x-AB3-R SOT-89
MCR100-8-x-AE3-R MCR100L-8-x-AE3-R MCR100G-8-x-AE3-R SOT-23
Tape Reel
Tape Reel
Tape Box
Bulk
MCR100-8-x-T92-B MCR100L-8-x-T92-B MCR100G-8-x-T92-B
MCR100-8-x-T92-K MCR100L-8-x-T92-K MCR100G-8-x-T92-K
Note: Pin assignment: G: Gate K: Cathode A: Anode
TO-92
TO-92
MCR100L-4-x-AB3-R
(1) Packing Type
(2) Package Type
(1) B: Tape Box, K: Bulk, R: Tape Reel
(2) AB3: SOT-89, AE3: SOT-23, T92: TO-92
(3) x: Refer to CLASSIFICATION OF IGT
(3) Rank
(4) G: Halogen Free, L: Lead Free, Blank: Pb/Sn
(4) Lead Plating
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Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R301-016.C
MCR100
SCR
MARKING FOR SOT-23
MCR100-4
MCR100-6
MCR100-8
R4
R6
R8
L: Lead Free
G: Halogen Free
L: Lead Free
G: Halogen Free
L: Lead Free
G: Halogen Free
UNISONIC TECHNOLOGIES CO., LTD
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QW-R301-016.C
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UNISONIC TECHNOLOGIES CO., LTD
MCR100
SCR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
200
UNIT
Peak Repetitive Off-State Voltage(Note 1)
(TJ=-40 ~ 110°С, Sine Wave, 50 ~ 60Hz;
Gate Open)
MCR100-4
MCR100-6
MCR100-8
V
V
V
A
VDRM,VRRM
400
600
On-Sate RMS Current (Tc=80°С) 180°С Condition Angles
Peak Non-Repetitive Surge Current
IT(RMS)
ITSM
0.8
10
A
(1/2 cycle, Sine Wave, 60Hz, TJ=25°С)
Circuit Fusing Considerations (t=8.3 ms)
I2t
0.415
0.1
0.1
1
A2s
W
W
A
Forward Peak Gate Power (TA=25°С, Pulse Width ≤1.0µs)
Forward Average Gate Power (TA=25°С, t=8.3ms)
Peak Gate Current – Forward (TA=25°С, Pulse Width≤1.0μs)
Peak Gate Voltage – Reverse (TA=25°С, Pulse Width≤1.0μs)
Operating Junction Temperature Range
PGM
PG(AV)
IGM
VGRM
5
V
TJ
-40 ~ +110
-40 ~ +150
°С
°С
(Rated VRRM and VDRM
)
Storage Temperature Range
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MAX
200
UNIT
°С/W
°С/W
TO-92
Junction to Ambient
θJA
SOT-23/SOT-89
400
ELECTRICAL CHARACTERISTICS (TJ=25°С, unless otherwise stated)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Peak Forward or Reverse Blocking TC=25°С
VD=Rated VDRM and VRRM
RGK=1kΩ
;
10
μA
IDRM, IRRM
Current
TC=125°С
100 μA
ON CHARACTERISTICS
Peak Forward On-State Voltage (Note 2)
VTM
IGT
ITM=1A Peak @ TA=25°С
VAK=7Vdc, RL=100Ω, TC=25°С
AK=7Vdc, initiating
1.7
V
Gate Trigger Current (Continuous DC)(Note3)
40
200 μA
5
TC=25°С
Holding Current (Note 4)
TC=-40°С
V
0.5
mA
mA
mA
mA
V
IH
IL
current=20mA
10
10
15
TC=25°С
0.6
Latch Current
VAK=7V, Ig=200μA
TC=-40°С
Gate Trigger Voltage (continuous
dc) (Note 3)
TC=25°С
TC=-40°С
0.62 0.8
1.2
VGT
VAK=7Vdc, RL=100Ω
V
DYNAMIC CHARACTERISTICS
VD=Rated VDRM, Exponential
Critical Rate of Rise of Off-State Voltage
dV/dt Waveform, RGK=1000Ω,
TJ=110°С
20
35
V/μs
I
PK=20A; Pw=10μsec;
Critical Rate of Rise of On-State Current
di/dt
50 A/μs
diG/dt=1A/μsec, Igt=20mA
Notes: 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the
anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of
the devices are exceeded.
2. Indicates Pulse Test Width≤1.0ms, duty cycle ≤1%
3. RGK=1000Ω included in measurement.
4. Does not include RGK in measurement
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Copyright © 2009 Unisonic Technologies Co., Ltd
QW-R301-016.C
UNISONIC TECHNOLOGIES CO., LTD
MCR100
SCR
VOLTAGE CURRENT CHARACTERISTIC OF SCR
PARAMETER
SYMBOL
VDRM
IDRM
Peak Repetitive Off Stat Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
VRRM
IRRM
VTM
Holding Current
IH
+Current
Anode+
VTM
On State
IH
IRRM at VRRM
+Voltage
IDRM at VDRM
Reverse Blocking
Region (off state)
Forward Blocking
Region (off state)
Reverse Avalanche
Region Anode-
CLASSIFICATION OF IGT
RANK
B
C
AA
AB
14~21μA
AC
AD
23~52μA
RANGE
48~105μA
95~200μA
8~16μA
19~25μA
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Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R301-016.C
MCR100
SCR
TYPICAL CHARACTERISTICS
Typical Gate Trigger Current vs.
Junction Temperature
Typical Gate Trigger Voltage vs.
Junction Temperature
100
90
1.0
0.9
0.8
80
70
0.7
0.6
60
50
0.5
40
30
20
10
0.4
0.3
0.2
-40-25-10 5 20 35 50
110
-40-25-10 5 20 35 50
110
65 80 95
65 80 95
Junction Temperature, TJ (℃)
Junction Temperature, TJ (℃)
Typical On-State Characteristics
Typical RMS Curent Derating
120
110
10
MAXIMUM@T
J=25℃
100
90
MAXIMUM@TJ=110℃
1
80
70
60
180°
120°
50
40
30°
60° 90°
0.3
RMS On-State Current, IT(RMS) (A)
0.1
0
0.1
0.2
0.5
0.5 0.8 1.11.4 1.7 2.0
3.5
2.3 2.62.9 3.2
0.4
Instantaneous On-State Voltage, VT (V)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R301-016.C
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MCR100
SCR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R301-016.C
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