MGBR10L30 [UTC]
MOS GATED BARRIER RECTIFIER;型号: | MGBR10L30 |
厂家: | Unisonic Technologies |
描述: | MOS GATED BARRIER RECTIFIER |
文件: | 总3页 (文件大小:125K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO.,LTD
MGBR12L40
Preliminary
DIODE
MOS GATED BARRIER
RECTIFIER
DESCRIPTION
The UTC MGBR12L40 is a surface mount mos gatedbarrier
rectifier,it uses UTC’s advanced technology to provide customers
withlow forward voltage drop and high switching speed, etc.
FEATURES
* Low forward voltage drop
* High switching speed
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-277
Packing
Tape Reel
Lead Free
Halogen Free
MGBR12L40G-T27-R
1
2
3
MGBR12L40L-T27-R
A
K
A
Note: Pin Assignment: A: Anode K: Common Cathode
MGBR12L40L-T27-R
(1)Packing Type
(1) R: Tape Reel
(2) T27: TO-227
(2)Package Type
(3)Lead Free
(3) L: Lead Free, G: Halogen Free
MARKING INFORMATION
PACKAGE
MARKING
TO-277
www.unisonic.com.tw
1 of 3
Copyright © 2014 Unisonic Technologies Co., Ltd
QWR-601-231.a
MGBR12L40
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS(TA=25°C, unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load,derate current by 20%.
PARAMETER
SYMBOL
VRM
RATINGS
UNIT
DC Blocking Voltage
40
40
40
12
V
V
V
A
WorkingPeak Reverse Voltage
Peak Repetitive Reverse Voltage
VRWM
VRRM
IO
Average Rectified Output Current
TC=140°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Repetitive Peak Avalanche Power (1μs, 25°C)
Operating Junction Temperature
IFSM
180
A
PARM
TJ
5000
W
°C
°C
-65~+150
-65~+150
Storage Temperature
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS (Note 3)
PARAMETER
SYMBOL
RATINGS
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJA
θJC
73
13
ELECTRICAL CHARACTERISTICS(TA=25°C,unless otherwise specified.)
PARAMETER
SYMBOL
V(BR)R
TEST CONDITIONS
IR=0.5mA
MIN TYP MAX UNIT
Reverse Breakdown Voltage (Note 1)
40
V
V
V
IF=12A, TJ=25°C
IF=12A, TJ=125°C
VR=40V, TJ=25°C
VR=40V, TJ=125°C
0.57
0.52
Forward Voltage Drop
VFM
IRM
80
12
300 μA
Leakage Current (Note 1)
40
mA
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Thermal resistance junction to case mounted on heatsink.
3. Mounted on an FR4 PCB, single-sided copper, with 100cm2 copper pad area.
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R601-231.a
www.unisonic.com.tw
MGBR12L40
Preliminary
DIODE
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R601-231.a
www.unisonic.com.tw
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