MGBR10V45G-TA2-T [UTC]
MOS GATED BARRIER RECTIFIER;型号: | MGBR10V45G-TA2-T |
厂家: | Unisonic Technologies |
描述: | MOS GATED BARRIER RECTIFIER |
文件: | 总3页 (文件大小:154K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MGBR10V45
DIODE
MOS GATED BARRIER
RECTIFIER
DESCRIPTION
The UTC MGBR10V45 is a surface mount mos gated barrier
rectifier, it uses UTC’s advanced technology to provide customers
with low forward voltage drop and high switching speed, etc.
FEATURES
* Very low forward voltage drop
* High switching speed
SYMBOL
TO-220 / TO-220F
TO-252 / TO-277
TO-220-2
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
1
2
A
K
K
K
K
3
MGBR10V45L-TA2-T
MGBR10V45L-TA3-T
MGBR10V45L-TF3-T
MGBR10V45L-TN3-R
MGBR10V45L-T27-R
MGBR10V45G-TA2-T
MGBR10V45G-TA3-T
MGBR10V45G-TF3-T
MGBR10V45G-TN3-R
MGBR10V45G-T27-R
TO-220-2
TO-220
TO-220F
TO-252
TO-277
K
A
A
A
A
-
Tube
A
A
A
A
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Note: Pin Assignment: A: Anode K: Common Cathode
MARKING
TO-220-2 / TO-220 / TO-220F / TO252
TO-277
www.unisonic.com.tw
1 of 3
Copyright © 2015 Unisonic Technologies Co., Ltd
QW-R601-119.E
MGBR10V45
DIODE
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER
SYMBOL
VRM
RATINGS
UNIT
DC Blocking Voltage
45
45
45
32
10
V
V
V
V
A
Working Peak Reverse Voltage
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
VRWM
VRRM
VR(RMS)
IO
Average Rectified Output Current
TC=140°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Operating Junction Temperature
IFSM
150
A
TJ
-65~+150
-65~+150
°C
°C
Storage Temperature
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
60
UNIT
°C/W
TO-220-2/TO-220
TO-220F
TO-252
Junction to Ambient
Junction to Case
θJA
110
73 (Note 3)
2
TO-277
TO-220-2/TO-220
TO-220F
TO-252
3.31
θJC
°C/W
2.5
TO-277
13 (Note 3)
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified.)
PARAMETER
SYMBOL
V(BR)R
TEST CONDITIONS
IR=0.5mA
MIN TYP MAX UNIT
Reverse Breakdown Voltage (Note 1)
45
V
V
V
IF=10A, TJ=25°C
0.53
0.48
Instantaneous Forward Voltage
VFM
IF=10A, TJ=125°C
VR=45V, TJ=25°C
VR=45V, TJ=125°C
VR=5V, f=1MHz, TJ=25°C
50
12
500 μA
Leakage Current (Note 1)
Total Capacitance
IRM
CT
40
mA
pF
400
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Thermal resistance junction to case mounted on heatsink.
3. Mounted on an FR4 PCB, single-sided copper, with 100cm2 copper pad area.
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R601-119.E
www.unisonic.com.tw
MGBR10V45
DIODE
TYPICAL CHARACTERISTICS
rating Curve
teristics
ward Charac
Typical For
Forward De
100
10
16
14
12
10
8
125°C
25°C
6
1.0
0.1
4
2
0
IF Pulse
Width=300uS
0
150 175
25 50 75 100 125
0.2
0.4
0.6
0.8
d Voltage (V)
1.0
eous Forwar
Instantan
)
perature (°C
Case Tem
Typical Reverse Characteristics
1E-1
1E-2
1E-3
1E-4
1E-5
1E-6
1E-7
VR=45V
25
50
100
125
150
75
Case Temperature (°C)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R601-119.E
www.unisonic.com.tw
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