MGBR40L150CL-TF3-T [UTC]

MOS GATED BARRIER RECTIFIER;
MGBR40L150CL-TF3-T
型号: MGBR40L150CL-TF3-T
厂家: Unisonic Technologies    Unisonic Technologies
描述:

MOS GATED BARRIER RECTIFIER

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UNISONIC TECHNOLOGIES CO., LTD  
MGBR40L150C  
Preliminary  
DIODE  
MOS GATED BARRIER  
RECTIFIER  
DESCRIPTION  
The UTC MGBR40L150C is a surface mount mos gatedbarrier  
rectifier,it uses UTC’s advanced technology to provide customers  
withlow forward voltage drop and high switching speed, etc.  
FEATURES  
* Low forward voltage drop  
* High switching speed  
SYMBOL  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
TO-220F  
Packing  
Tube  
Lead Free  
Halogen Free  
MGBR40L150CG-TF3-T  
1
2
3
MGBR40L150CL-TF3-T  
A
K
A
Note: Pin Assignment: A: Anode K: Common Cathode  
MARKING  
www.unisonic.com.tw  
1 of 3  
Copyright © 2015 Unisonic Technologies Co., Ltd  
QW-R204-047.b  
MGBR40L150C  
Preliminary  
DIODE  
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitance load,derate current by 20%.  
PARAMETER  
SYMBOL  
VRRM  
RATINGS  
UNIT  
Repetitive Peak Reverse Voltage  
150  
20  
V
A
A
Average Rectified Output Current Per  
Device  
Per Leg  
Total  
IO  
40  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single Half Sine-Wave Superimposed on Rated Load  
Operating Junction Temperature  
IFSM  
250  
A
TJ  
-65~+150  
-65~+150  
°C  
°C  
Storage Temperature  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
θJA  
RATINGS  
62.5  
UNIT  
°C/W  
°C/W  
Junction to Ambient  
Junction to Case  
θJC  
3.31  
ELECTRICAL CHARACTERISTICS(TA=25°C,unless otherwise specified.)  
PARAMETER  
SYMBOL  
V(BR)R  
TEST CONDITIONS  
IR=0.5mA  
MIN TYP MAX UNIT  
Reverse Breakdown Voltage (Note 1)  
150  
V
V
V
IF=20A, TJ=25°C  
0.90  
0.82  
Forward Voltage Drop  
VFM  
IRM  
IF=20A, TJ=125°C  
VR=150V, TJ=25°C  
VR=150V, TJ=125°C  
100 μA  
Leakage Current (Note 1)  
15  
mA  
Notes: 1. Short duration pulse test used to minimize self-heating effect.  
2. Thermal resistance junction to case mounted on heatsink.  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R204-047.b  
www.unisonic.com.tw  
MGBR40L150C  
Preliminary  
DIODE  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R204-047.b  
www.unisonic.com.tw  

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