MGBR5U40_15 [UTC]
MOS GATED BARRIER RECTIFIER;型号: | MGBR5U40_15 |
厂家: | Unisonic Technologies |
描述: | MOS GATED BARRIER RECTIFIER |
文件: | 总3页 (文件大小:133K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MGBR5U40
Preliminary
DIODE
MOS GATED BARRIER
RECTIFIER
DESCRIPTION
+
The UTC MGBR5U40 is a surface mount mos gated barrier
rectifier, it uses UTC’s advanced technology to provide customers
with low forward voltage drop and high switching speed, etc.
-
SMB
FEATURES
* Ultra low forward voltage drop
* High switching speed
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SMB
Packing
Lead Free
Halogen Free
MGBR5U40G-SMB-R
1
2
MGBR5U40L-SMB-R
K
A
Tape Reel
Note: Pin Assignment: A: Anode K: Common Cathode
MARKING
Date Code
UTC
5U40
Cathode Band for
uni-directional Only
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
1 of 3
Copyright © 2015 Unisonic Technologies Co., Ltd
QW-R601-198.b
MGBR5U40
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER
SYMBOL
VRM
RATINGS
UNIT
DC Blocking Voltage
40
40
40
32
5
V
V
V
V
A
Working Peak Reverse Voltage
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
VRWM
VRRM
VR(RMS)
IO
Average Rectified Output Current
TC=140°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Repetitive Peak Avalanche Power (1μs, 25°C)
Operating Junction Temperature
IFSM
120
A
PARM
TJ
5000
W
°C
°C
-65~+150
-65~+150
Storage Temperature
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
70
UNIT
°C/W
Junction to Ambient
θJA
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified.)
PARAMETER
SYMBOL
V(BR)R
TEST CONDITIONS
IR=0.5mA
MIN TYP MAX UNIT
Reverse Breakdown Voltage (Note 1)
40
V
V
V
IF=5A, TJ=25°C
0.43
0.39
Instantaneous Forward Voltage
VFM
IRM
IF=5A, TJ=125°C
VR=40V, TJ=25°C
VR=40V, TJ=125°C
500 μA
Leakage Current (Note 1)
100 mA
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Thermal resistance junction to case mounted on heatsink.
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R601-198.b
www.unisonic.com.tw
MGBR5U40
Preliminary
DIODE
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R601-198.b
www.unisonic.com.tw
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