MJE13001G-L-T92-K [UTC]
Small Signal Bipolar Transistor, 0.2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN FREE PACKAGE-3;
| 型号： | MJE13001G-L-T92-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor, 0.2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN FREE PACKAGE-3 晶体管 |
| 文件： | 总3页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MJE13001
NPN SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTOR
FEATURES
* Collector-base voltage: V(BR)CBO=600V
* Collector current: IC=0.2A
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
E
B
B
B
E
E
2
3
B
E
E
E
B
B
MJE13001L-x-AB3-A -R
MJE13001L-x-AB3-F -R
MJE13001L-x-T92-B
MJE13001L-x-T92-K
MJE13001L-x-T92-A-B
MJE13001L-x-T92-A-K
MJE13001G-x-AB3-A-R
MJE13001G-x-AB3-F-R
MJE13001G-x-T92-B
MJE13001G-x-T92-K
MJE13001G-x-T92-A-B
MJE13001G-x-T92-A-K
SOT-89
SOT-89
TO-92
TO-92
TO-92
TO-92
Tape Reel
Tape Reel
Tape Box
Bulk
C
C
C
C
C
C
Tape Box
Bulk
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Copyright © 2013 Unisonic Technologies Co., Ltd
QW-R201-055.H
MJE13001
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
SYMBOL
VCEO
VCBO
VEBO
IC
RATINGS
400
UNIT
V
600
V
7
V
Collector Current
200
mA
SOT-89
Collector Power Dissipation
TO-92
550
PC
mW
750
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
°C
°C
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
SYMBOL
BVCBO
TEST CONDITIONS
IC=100μA, IE=0
IC=1mA, IB=0
MIN TYP MAX UNIT
V
600
400
7
BVCEO
V
V
Emitter-Base Breakdown Voltage
Base-Emitter Voltage
Collector Cutoff Cut-Off Current
BVEBO
VBE
ICBO
IE=100μA, IC=0
IE=100 mA
1.1
100
200
100
V
V
CB=600V, IE=0A
VCE=400V, IB=0
EB=7V, IC=0A
μA
μA
μA
Collector Emitter Cut-Off Current
Emitter Cutoff Cut-Off Current
ICEO
IEBO
V
ON CHARACTERISTICS
hFE1
*
VCE=20 V, IC=20mA
VCE=10V, IC=0.25mA
IC=50mA, IB=10mA
IC=50mA, IB=10mA
10
5
70
DC Current Gain
hFE2
VCE(SAT)
Collector-Emitter Saturation Voltage
0.5
1.2
V
V
Base-Emitter Saturation Voltage
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
VBE(SAT)
fT
IC=20mA,VCE=20V,f=1MHz
IC=50mA, IB1=-IB2=5mA,
8
MHz
Resistive Load
Storage Time
Fall Time
tS
tF
1.5
0.3
μs
μs
VCC=45V
CLASSIFICATION OF hFE1
*
RANK
A
B
C
D
E
F
G
H
I
J
K
L
RANGE 10-15 15-20 20-25 25-30 30-35 35-40 40-45 45-50 50-55 55-60 60-65 65-70
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R201-055.H
www.unisonic.com.tw
MJE13001
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R201-055.H
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