MJE13001 [UTC]
NPN EPITAXIAL SILICON TRANSISTOR; NPN外延硅晶体管
| 型号： | MJE13001 |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN EPITAXIAL SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC MJE13001
NPN EPITAXIAL SILICON TRANSISTOR
FEATURES
* Collector-Base Voltage: V(BR)CBO=600V
* Collector Current: IC=0.2A
1
TO-92
1: BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
SYMBOL
VCBO
VCEO
VEBO
Ic
Pc
Tj
TSTG
RATING
600
400
7
200
750
150
-55 ~ +150
UNIT
V
V
V
Collector current
mA
mW
°C
Collector power dissipation
Junction Temperature
Storage Temperature
°C
ELECTRICAL CHARACTERISTICS (Tc=25°C)
PARAMETER
SYMBOL
V(BR)CBO
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage V(BR)CEO
IC=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=600V, IE=0
VCE=400V, IB=0
VEB=7V, IC=0
600
400
7
V
V
V
µA
µA
µA
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC current gain
V(BR)EBO
ICBO
ICEO
100
200
100
70
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE
VCE=20V, Ic=20mA
VCE=10V, Ic=0.25mA
Ic=50mA, IB=10mA
Ic=50mA, IB=10mA
IE=100mA
10
5
Collector-emitter saturation voltage
Base-emitter Saturation Voltage
Base-emitter Voltage
Transition Frequency
Fall Time
0.5
1.2
1.1
V
V
V
MHz
µs
µs
fT
tF
tS
VCE=20V, Ic=20mA, f=1MHz
Ic=50mA, IB1=-IB2=5mA,
Vcc=45V
8
0.3
1.5
Storage Time
1
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R201-055,A
UTC MJE13001
NPN EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE
RANK
A
B
C
D
E
F
G
H
I
J
K
L
RANGE
10-15 15-20 20-25 25-30 30-35 35-40 40-45 45-50 50-55 55-60 60-65 65-70
TYPICAL CHARACTERISTICS
Figure 2. DC Current Gain
VCE=10V
Figure 1. Staic Characteristic
20
1000
100
18
16
IB =120uA
14
IB =100uA
12
IB =80uA
10
8
6
IB =60uA
10
1
IB =40uA
4
IB =20uA
2
0
0
20
40
60
80
100
1
10
100
VCE (V) Collector-Emitter Voltage
Ic (mA)Collector Current
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
Figure 4. Collector Output Capacitance
20
10
IE=0
IC =10IB
f=1MHz
VBE(sat)
1
1
0.1
VCE(sat)
10
Ic (mA)Collector Current
0.01
1
0.1
1
10
100
100
VCB(V),Collector-Base Voltage
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
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presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
2
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R201-055,A
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